Thin Film Transistors Polycrystalline Silicon Thin Film Transistors
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| Author | : Yue Kuo |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 528 |
| Release | : 2004 |
| Genre | : Thin film transistors |
| ISBN | : 9781402075063 |
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
| Author | : S.D. Brotherton |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 467 |
| Release | : 2013-04-16 |
| Genre | : Technology & Engineering |
| ISBN | : 3319000020 |
Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
| Author | : Ted Kamins |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 391 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461555779 |
Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
| Author | : Cherie R. Kagan |
| Publisher | : CRC Press |
| Total Pages | : 543 |
| Release | : 2003-02-25 |
| Genre | : Technology & Engineering |
| ISBN | : 0203911776 |
This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays. It evaluates the preparation of polycrystallin
| Author | : Tor A Fjeldly |
| Publisher | : World Scientific |
| Total Pages | : 188 |
| Release | : 2000-04-20 |
| Genre | : Technology & Engineering |
| ISBN | : 9814493260 |
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
| Author | : Ted Kamins |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 302 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461316812 |
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
| Author | : Akhtar Kalam |
| Publisher | : Springer |
| Total Pages | : 808 |
| Release | : 2017-10-27 |
| Genre | : Technology & Engineering |
| ISBN | : 9811047650 |
This book is a compilation of research work in the interdisciplinary areas of electronics, communication, and computing. This book is specifically targeted at students, research scholars and academicians. The book covers the different approaches and techniques for specific applications, such as particle-swarm optimization, Otsu’s function and harmony search optimization algorithm, triple gate silicon on insulator (SOI)MOSFET, micro-Raman and Fourier Transform Infrared Spectroscopy (FTIR) analysis, high-k dielectric gate oxide, spectrum sensing in cognitive radio, microstrip antenna, Ground-penetrating radar (GPR) with conducting surfaces, and digital image forgery detection. The contents of the book will be useful to academic and professional researchers alike.
| Author | : Maryam Takht Ravanchi |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 364 |
| Release | : 2017-01-25 |
| Genre | : Science |
| ISBN | : 9535128698 |
Hydrogen is one of the abundant elements on earth majorly in the form of water (H2O) and mainly as hydrogen gas (H2). Catalytic hydrogenation is a key reaction that has versatile applications in different industries. The main objective of this book is to bring together various applications of hydrogenation through the perspective of leading researchers in the field. This book is intended to be used as a graduate-level text book or as a practical guide for industrial engineers.
| Author | : Y. Kuo |
| Publisher | : The Electrochemical Society |
| Total Pages | : 443 |
| Release | : 2010-10 |
| Genre | : Science |
| ISBN | : 1566778247 |
This special issue of ECS Transactions is for the 20th anniversary of the Thin Film Transistor (TFT) symposium series. Renowned TFT experts in related materials, processes, devices, and applications from the world serve as invited speakers to review the technology and science progress in the past two decades. Selected contributed papers are also included in this issue.
| Author | : Hideo Hosono |
| Publisher | : John Wiley & Sons |
| Total Pages | : 644 |
| Release | : 2022-05-17 |
| Genre | : Technology & Engineering |
| ISBN | : 1119715652 |
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
