Thin Film Growth Techniques For Low Dimensional Structures
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| Author | : R.F.C. Farrow |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 548 |
| Release | : 2013-03-09 |
| Genre | : Technology & Engineering |
| ISBN | : 1468491458 |
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
| Author | : R. F. C. Farrow |
| Publisher | : |
| Total Pages | : 564 |
| Release | : 2014-01-15 |
| Genre | : |
| ISBN | : 9781468491463 |
| Author | : R.F.C. Farrow |
| Publisher | : Springer |
| Total Pages | : 552 |
| Release | : 2012-12-28 |
| Genre | : Technology & Engineering |
| ISBN | : 9781468491470 |
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
| Author | : M. Balkanski |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 417 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9400902891 |
Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.
| Author | : R.F.C. Farrow |
| Publisher | : Springer |
| Total Pages | : 0 |
| Release | : 1987-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9780306426865 |
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
| Author | : Tom Kuech |
| Publisher | : Elsevier |
| Total Pages | : 1384 |
| Release | : 2014-11-02 |
| Genre | : Science |
| ISBN | : 0444633057 |
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
| Author | : T.C. McGill |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 338 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 146845661X |
This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
| Author | : Robert M. Metzger |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 729 |
| Release | : 2013-11-11 |
| Genre | : Science |
| ISBN | : 1489920889 |
This volume represents the written account of the NATO Advanced Study Institute "Lower-Dimensional Systems and Molecular Electronics" held at Hotel Spetses, Spetses Island, Greece from 12 June to 23 June 1989. The goal of the Institute was to demonstrate the breadth of chemical and physical knowledge that has been acquired in the last 20 years in inorganic and organic crystals, polymers, and thin films, which exhibit phenomena of reduced dimensionality. The interest in these systems started in the late 1960's with lower-dimensional inorganic conductors, in the early 1970's with quasi-one-dimensional crystalline organic conductors. which by 1979 led to the first organic superconductors, and, in 1977, to the fITSt conducting polymers. The study of monolayer films (Langmuir-Blodgett films) had progressed since the 1930's, but reached a great upsurge in . the early 1980's. The pursuit of non-linear optical phenomena became increasingly popular in the early 1980's, as the attention turned from inorganic crystals to organic films and polymers. And in the last few years the term "moleculw' electronics" has gained ever-increasing acceptance, although it is used in several contexts. We now have organic superconductors with critical temperatures in excess of 10 K, conducting polymers that are soluble and processable, and used commercially; we have films of a few monolayers that have high in-plane electrical conductivity, and polymers that show great promise in photonics; we even have a few devices that function almost at the molecular level.
| Author | : Hartmut Haug |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 374 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 146847278X |
This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstruture extensions, of the compositions, and of the doping offer great new flexibility in engineering the desired optical properties. Recently, organic chain molecules (such as polydiacetilene) which are different realizations of one dimensional electronic systems, have been shown also to have interesting optical nonlinearities. Both the development and study of optical and electro-optical devices, as well as experimental and theoretical investigations of the underlying optical nonlinearities, are contained in this book.
| Author | : Pierre Delhaes |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 488 |
| Release | : 2013-12-01 |
| Genre | : Science |
| ISBN | : 1489920919 |
The research of unitary concepts in solid state and molecular chemistry is of current interest for both chemist and physicist communities. It is clear that due to their relative simplicity, low dimensional materials have attracted most of the attention. Thus, many non-trivial problems were solved in chain systems, giving some insight into the behavior of real systems which would otherwise be untractable. The NATO Advanced Research Workshop on "Organic and Inorganic Low-Dimensional Crystalline Materials" was organized to review the most striking electronic properties exhibited by organic and inorganic sytems whose space dimensionality ranges from zero (Od) to one (1d), and to discuss related scientific and technological potentials. The initial objectives of this Workshop were, respectively: i) To research unitary concepts in solid state physics, in particular for one dimensional compounds, ii) To reinforce, through a close coupling between theory and experiment, the interplay between organic and inorganic chemistry, on the one hand, and solid state physics on the other, iii) To get a salient understanding of new low-dimensional materials showing "exotic" physical properties, in conjunction with structural features.
