Theoretical Study of Crystal-amorphous Transition in (111) Silicon, and Oxidation of (100) Silicon
Author | : Suresh Gorantla |
Publisher | : |
Total Pages | : 108 |
Release | : 1997 |
Genre | : Molecular beam epitaxy |
ISBN | : |
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Author | : Suresh Gorantla |
Publisher | : |
Total Pages | : 108 |
Release | : 1997 |
Genre | : Molecular beam epitaxy |
ISBN | : |
Author | : Donald T. Hawkins |
Publisher | : Springer Science & Business Media |
Total Pages | : 305 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 1468413872 |
Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
Author | : |
Publisher | : |
Total Pages | : 700 |
Release | : 1995 |
Genre | : Aeronautics |
ISBN | : |
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author | : Yves J. Chabal |
Publisher | : Springer Science & Business Media |
Total Pages | : 288 |
Release | : 2001-04-24 |
Genre | : Medical |
ISBN | : 9783540416821 |
The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on a crystalline substrate. In this book we present a survey of the state-of-the-art methods, both ex perimental and theoretical, specifically dealing with the issue of amorphous dielectric growth. Each chapter critically reviews and cross-correlates infor mation provided by experimental techniques, such as microscopy, spectro scopy, or scattering, with results obtained using theoretical methods, such as ab initio electronic structure calculations, molecular dynamics, and Monte Carlo simulations.
Author | : E. Kasper |
Publisher | : CRC Press |
Total Pages | : 306 |
Release | : 2018-05-04 |
Genre | : Technology & Engineering |
ISBN | : 1351085077 |
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author | : Yitzhak Mastai |
Publisher | : BoD – Books on Demand |
Total Pages | : 374 |
Release | : 2015-05-06 |
Genre | : Science |
ISBN | : 9535121251 |
In nearly all process industries, crystallization is used at some stage as a method of production, purification or recovery of solid materials. In recent years, a number of new applications have also come to rely on crystallization processes such as the crystallization of nano and amorphous materials. The articles in this book have been contributed by some of the most respected researchers in this area and cover the frontier areas of research and developments in crystallization processes. Divided into three sections, this book provides the latest research developments in many aspects of crystallization including the crystallization of biological macromolecules and pharmaceutical compounds, the crystallization of nanomaterials and the crystallization of amorphous and glassy materials. This book is of interest to both fundamental research and practicing scientists and will prove invaluable to all chemical engineers and industrial chemists in process industries, as well as crystallization workers and students in industry and academia.
Author | : Bell Telephone Laboratories, inc. Libraries and Information Systems Center |
Publisher | : |
Total Pages | : 586 |
Release | : 1984 |
Genre | : Electrical engineering |
ISBN | : |