The Stopping And Ranges Of Ions In Matter Handbook Of Stopping Cross Sections For Energetic Ions In All Elements
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| Author | : J. F. Ziegler |
| Publisher | : Elsevier |
| Total Pages | : 437 |
| Release | : 2013-09-11 |
| Genre | : Science |
| ISBN | : 1483148203 |
Stopping Cross-Sections for Energetic Ions in All Elements shows the stopping cross-sections of energetic ions in various elements in both solid and gas phase targets. The book plots chosen ion and target combinations to allow accurate linear interpolation between plots for all elemental ions and all elemental targets (atomic number 1 through 92). Existing stopping data and summaries of the experimental data are presented as well. Chapters are also devoted to electronic and nuclear stopping of ions. Physicists, researchers, physicians, nuclear scientists, radiologists, and engineers will find the book a good reference material.
| Author | : James F. Ziegler |
| Publisher | : |
| Total Pages | : |
| Release | : 1977 |
| Genre | : Effective range (Nuclear physics) |
| ISBN | : |
| Author | : J.F Ziegler |
| Publisher | : |
| Total Pages | : |
| Release | : 1977 |
| Genre | : |
| ISBN | : |
| Author | : James F. Ziegler |
| Publisher | : |
| Total Pages | : |
| Release | : 1980 |
| Genre | : Ionis |
| ISBN | : |
| Author | : |
| Publisher | : Elsevier |
| Total Pages | : 967 |
| Release | : 1999-02-11 |
| Genre | : Technology & Engineering |
| ISBN | : 0080534767 |
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
| Author | : Peter Sigmund |
| Publisher | : Springer |
| Total Pages | : 617 |
| Release | : 2014-05-29 |
| Genre | : Science |
| ISBN | : 331905564X |
This book represents volume 2 of a 3-volume monograph on Particle Penetration and Radiation Effects. While volume 1 addressed the basic theory of scattering and stopping of swift point charges, i.e., protons, antiprotons and alpha particles, the present volume focuses on ions heavier than helium as well as molecules and clusters over an energy range from a few keV/u to a few hundred MeV/u. The book addresses the foundations in atomic-collision physics of a wide variety of application areas within materials and surface science and engineering, micro and nano science and technology, radiation medicine and biology as well as nuclear and particle physics. Problems have been added to all chapters. This should make the book useful for both self-study and advanced university courses. An effort has been made to establish a unified notation throughout the monograph.
| Author | : J.F. Ziegler |
| Publisher | : Elsevier |
| Total Pages | : 649 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0323144012 |
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
| Author | : Dietmar Fink |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 410 |
| Release | : 2013-03-14 |
| Genre | : Technology & Engineering |
| ISBN | : 3662073269 |
Presented in two parts, this first comprehensive overview addresses all aspects of energetic ion irradiation of polymers. Earlier publications and review articles concentrated on selected topics only. And the need for such a work has grown with the dramatic increase of research and applications, such as in photoresists, waveguides, and medical dosimetry, during the last decade. The first part, Fundamentals of Ion Irradiation of Polymers covers the physical, chemical and instrumental fundamentals; treats the specific irradiation mechanisms of low- and high-energy ions (including similarities and differences); and details the potential for future technological application. All the new findings are carefully analyzed and presented in a systematic way, while open questions are identified.
| Author | : Bernhard Wolf |
| Publisher | : CRC Press |
| Total Pages | : 558 |
| Release | : 2017-07-12 |
| Genre | : Technology & Engineering |
| ISBN | : 1351829947 |
The Handbook of Ion Sources delivers the data needed for daily work with ion sources. It also gives information for the selection of a suitable ion source and ion production method for a specific application. The Handbook concentrates on practical aspects and introduces the principle function of ion sources. The basic plasma parameters are defined and discussed. The working principles of various ion sources are explained, and examples of each type of ion source are presented with their operational data. Tables of ion current for various elements and charge states summarize the performance of different ion sources. The problems related to the production of ions of non-gaseous elements are detailed, and data on useful materials for evaporation and ion source construction are summarized. Additional chapters are dedicated to extraction and beam formation, ion beam diagnosis, ion source electronics, and computer codes for extraction, acceleration, and beam transport. Emittance and brilliance are described and space charge effects and neutralization discussed. Various methods for the measurement of current, profile, emittance, and time structure are presented and compared. Intensity limits for these methods are provided for different ion energies. Typical problems related to the operation of ion source plasmas are discussed and practical examples of circuits are given. The influence of high voltage on ion source electronics and possibilities for circuit protection are covered. The generation of microwaves and various microwave equipment are described and special problems related to microwave operation are summarized. The Handbook of Ion Sources is a valuable reference on the subject, of benefit to practitioners and graduate students interested in accelerators, ion implantation, and ion beam techniques.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 339 |
| Release | : 1990-02-22 |
| Genre | : Technology & Engineering |
| ISBN | : 0080865070 |
