The Ratio Of Cdf Low Esub T Jet Cross Sections At Square Roots
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| Total Pages | : 7 |
| Release | : 1993 |
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| ISBN | : |
Inclusive jet cross-sections have been measured in {bar p}p collisions at (square root)s = 546 and 1,800 GeV, using the CDF detector at the Fermilab Tevatron. The ratio of low E{sub t} (25--75 GeV) jet cross sections vs. E{sub t} has been formed, and the authors have used this as a tool to investigate some implications of the published 1989 CDF ''jet scaling'' results. In particular, results at 1,800 GeV have given no indication of any unsuspected errors in CDF's low E{sub t} jet measurements.
| Author | : John Krane |
| Publisher | : |
| Total Pages | : 436 |
| Release | : 1998 |
| Genre | : |
| ISBN | : |
| Author | : |
| Publisher | : |
| Total Pages | : 700 |
| Release | : 1995 |
| Genre | : Aeronautics |
| ISBN | : |
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
| Author | : J. Thanh Van Tran |
| Publisher | : Atlantica Séguier Frontières |
| Total Pages | : 400 |
| Release | : 1981 |
| Genre | : Dilepton production |
| ISBN | : 9782863320082 |
| Author | : André Martin (Professeur.) |
| Publisher | : M.E. Sharpe |
| Total Pages | : 152 |
| Release | : 1970 |
| Genre | : Science |
| ISBN | : |
| Author | : Hermann Kolanoski |
| Publisher | : Oxford University Press |
| Total Pages | : 949 |
| Release | : 2020-06-30 |
| Genre | : Science |
| ISBN | : 0191899232 |
This book describes the fundamentals of particle detectors as well as their applications. Detector development is an important part of nuclear, particle and astroparticle physics, and through its applications in radiation imaging, it paves the way for advancements in the biomedical and materials sciences. Knowledge in detector physics is one of the required skills of an experimental physicist in these fields. The breadth of knowledge required for detector development comprises many areas of physics and technology, starting from interactions of particles with matter, gas- and solid-state physics, over charge transport and signal development, to elements of microelectronics. The book's aim is to describe the fundamentals of detectors and their different variants and implementations as clearly as possible and as deeply as needed for a thorough understanding. While this comprehensive opus contains all the materials taught in experimental particle physics lectures or modules addressing detector physics at the Master's level, it also goes well beyond these basic requirements. This is an essential text for students who want to deepen their knowledge in this field. It is also a highly useful guide for lecturers and scientists looking for a starting point for detector development work.
| Author | : John Geweke |
| Publisher | : John Wiley & Sons |
| Total Pages | : 322 |
| Release | : 2005-10-03 |
| Genre | : Mathematics |
| ISBN | : 0471744727 |
Tools to improve decision making in an imperfect world This publication provides readers with a thorough understanding of Bayesian analysis that is grounded in the theory of inference and optimal decision making. Contemporary Bayesian Econometrics and Statistics provides readers with state-of-the-art simulation methods and models that are used to solve complex real-world problems. Armed with a strong foundation in both theory and practical problem-solving tools, readers discover how to optimize decision making when faced with problems that involve limited or imperfect data. The book begins by examining the theoretical and mathematical foundations of Bayesian statistics to help readers understand how and why it is used in problem solving. The author then describes how modern simulation methods make Bayesian approaches practical using widely available mathematical applications software. In addition, the author details how models can be applied to specific problems, including: * Linear models and policy choices * Modeling with latent variables and missing data * Time series models and prediction * Comparison and evaluation of models The publication has been developed and fine- tuned through a decade of classroom experience, and readers will find the author's approach very engaging and accessible. There are nearly 200 examples and exercises to help readers see how effective use of Bayesian statistics enables them to make optimal decisions. MATLAB? and R computer programs are integrated throughout the book. An accompanying Web site provides readers with computer code for many examples and datasets. This publication is tailored for research professionals who use econometrics and similar statistical methods in their work. With its emphasis on practical problem solving and extensive use of examples and exercises, this is also an excellent textbook for graduate-level students in a broad range of fields, including economics, statistics, the social sciences, business, and public policy.
| Author | : Fred Jegerlehner |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 433 |
| Release | : 2008 |
| Genre | : Science |
| ISBN | : 3540726330 |
This book reviews the present state of knowledge of the anomalous magnetic moment a=(g-2)/2 of the muon. The muon anomalous magnetic moment is one of the most precisely measured quantities in elementary particle physics and provides one of the most stringent tests of relativistic quantum field theory as a fundamental theoretical framework. It allows for an extremely precise check of the standard model of elementary particles and of its limitations.
| Author | : Vincenzo Barone |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 414 |
| Release | : 2013-03-09 |
| Genre | : Science |
| ISBN | : 3662047241 |
A comprehensive and up-to-date overview of soft and hard diffraction processes in strong interaction physics. The first part covers soft hadron—hadron scattering in a complete and mature presentation. It can be used as a textbook in particle physics classes. Chapters 8-11 address graduate students as well as researchers, covering the "new diffraction": the pomeron in QCD, low-x physics, diffractive deep inelastic scattering and related processes.
| Author | : Dieter K. Schroder |
| Publisher | : John Wiley & Sons |
| Total Pages | : 800 |
| Release | : 2015-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0471739065 |
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
