The Physics Of Sio2 And Its Interfaces
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Author | : Sokrates T. Pantelides |
Publisher | : Elsevier |
Total Pages | : 501 |
Release | : 2013-09-17 |
Genre | : Science |
ISBN | : 148313900X |
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Author | : Sokrates T. Pantelides |
Publisher | : |
Total Pages | : 0 |
Release | : 1978 |
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Author | : |
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Total Pages | : 488 |
Release | : 1978 |
Genre | : |
ISBN | : 9780080230498 |
Author | : IBM Thomas J. Watson Research Center. International Topical Conference on the Physics of SiO2 and its Interfaces |
Publisher | : |
Total Pages | : |
Release | : 1978 |
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ISBN | : |
Author | : B.E. Deal |
Publisher | : Springer Science & Business Media |
Total Pages | : 505 |
Release | : 2013-11-09 |
Genre | : Science |
ISBN | : 1489915885 |
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author | : S.T. Pantelides |
Publisher | : |
Total Pages | : 0 |
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Author | : Hisham Z. Massoud |
Publisher | : |
Total Pages | : 804 |
Release | : 1996 |
Genre | : Science |
ISBN | : |
Author | : Sokrates T. Pantelides |
Publisher | : |
Total Pages | : 500 |
Release | : 1978 |
Genre | : |
ISBN | : |
The types of self-trapped holes and excitons that may exist in vitreous SiO2 are discussed. Similarities and differences between this material and the chalcogenide semiconductors are pointed out. The study of amorphous semiconductors during the last decade has provided concepts which give a fair understanding of charge transport in these materials, though there are still many points that are controversial. The aim of this paper is to apply these concepts of the electrical and optical properties of vitreous silicon dioxide. I have published two paper on this subject; here I shall summarize the ideas presented there, bring them up to date and revise a few of them. (Author).
Author | : |
Publisher | : |
Total Pages | : 488 |
Release | : 1978 |
Genre | : Silica |
ISBN | : |
Author | : Jarek Dabrowski |
Publisher | : World Scientific |
Total Pages | : 580 |
Release | : 2000 |
Genre | : Science |
ISBN | : 9789810232863 |
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.