The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000
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The Physics and Chemistry of Sio2 and the Si-Sio2 Interface
Author | : B. E. Deal |
Publisher | : |
Total Pages | : 572 |
Release | : 2014-01-15 |
Genre | : |
ISBN | : 9781489907752 |
The Physics and Chemistry of Sio2 and the Si-Sio2 Interface 2
Author | : B. E. Deal |
Publisher | : |
Total Pages | : 520 |
Release | : 2014-09-01 |
Genre | : |
ISBN | : 9781489915894 |
The Physics of SiO2 and Its Interfaces
Author | : Sokrates T. Pantelides |
Publisher | : Elsevier |
Total Pages | : 501 |
Release | : 2013-09-17 |
Genre | : Science |
ISBN | : 148313900X |
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5
Author | : Hisham Z. Massoud |
Publisher | : ECS Transactions |
Total Pages | : 304 |
Release | : 2005-01-01 |
Genre | : Dielectrics |
ISBN | : 9781566774307 |
This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.
Silicon Nitride and Silicon Dioxide Thin Insulating Films
Author | : Electrochemical Society. Dielectric Science and Technology Division |
Publisher | : The Electrochemical Society |
Total Pages | : 304 |
Release | : 2001 |
Genre | : Science |
ISBN | : 9781566773133 |
Rapid Thermal and Other Short-time Processing Technologies II
Author | : Dim-Lee Kwong |
Publisher | : The Electrochemical Society |
Total Pages | : 458 |
Release | : 2001 |
Genre | : Technology & Engineering |
ISBN | : 9781566773157 |
"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."