Nanostructured Metal Oxides and Devices

Nanostructured Metal Oxides and Devices
Author: M. K. Jayaraj
Publisher: Springer Nature
Total Pages: 348
Release: 2020-04-16
Genre: Technology & Engineering
ISBN: 9811533148

This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures – their optical and electrical properties – are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

NON-LINEAR OPTICAL PROPERTIES OF TWO DIMENSIONAL QUANTUM WELL STRUCTURES.

NON-LINEAR OPTICAL PROPERTIES OF TWO DIMENSIONAL QUANTUM WELL STRUCTURES.
Author:
Publisher:
Total Pages:
Release: 2002
Genre:
ISBN:

In this work optical properties of two dimensional quantum well structures are studied. Variational calculation of the eigenstates in an isolated quantum well structure with and without the external electrical field is presented. At weak fields a quadratic Stark shift is found whose magnitude depends strongly on the finite well depth. It is observed that under external electrical field, the asymmetries due to lack of inversion symmetry leads to higher order nonlinear optical effects such as second order optical polarization and second order optical susceptibility.

Properties of III-V Quantum Wells and Superlattices

Properties of III-V Quantum Wells and Superlattices
Author: P. K. Bhattacharya
Publisher: IET
Total Pages: 238
Release: 1996
Genre: Electronic books
ISBN: 9780852968819

A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Optical Properties of Quantum Wells Composed of All-Binary InAs/GaAs Short-Period Superlattices

Optical Properties of Quantum Wells Composed of All-Binary InAs/GaAs Short-Period Superlattices
Author: Martin D. Dawson
Publisher:
Total Pages: 4
Release: 1992
Genre:
ISBN:

Strained alloy InGaAs/GaAs multiple quantum well structures (MQWs), on GaAs substrates, are being investigated' for use in optical modulators, low-threshold diode lasers, photodetectors and other opto-electronic devices operating near 1 um. Attempts are being made to cover the 0.9-1.1 am spectral range by varying well-widths and/or alloy mole-fraction and by growing such structures on superlattice or alloy buffer layers. Special problems, however, are posed in growing these strained ternary alloy quantum wells with high quality by epitaxial techniques. Alloy concentration is difficult to reproduce, and alloy-disorder introduces an additional line-broadening contribution and non-uniformity into the materials. The critical thickness parameter places an upper limit on the indium mole-fraction (and thereby the strain) for growth directly on GaAs, restricting the flexibility in varying the well width for increased spectral coverage. Typically, this mole-fraction must be less than 0.2, and the lattice-parameter mismatch below 2%, for well-widths -10 nm. Here, we focus on structures in which each quantum well consists of an ordered InAs/GaAs short-period superlattice as an attractive alternative to the random InGaAs alloy structures. These all-binary MQWs are highly-strained (7% lattice parameter mismatch) and can accommodate high average indium mole-fraction (30-40%) in wide wells (10-20 nm) without evidence of strain relaxation due to misfit dislocation formation.

Quantum Wells, Wires and Dots

Quantum Wells, Wires and Dots
Author: Paul Harrison
Publisher: John Wiley & Sons
Total Pages: 624
Release: 2016-04-29
Genre: Science
ISBN: 1118923340

Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.

Quantum Theory of the Optical and Electronic Properties of Semiconductors

Quantum Theory of the Optical and Electronic Properties of Semiconductors
Author: Hartmut Haug
Publisher: World Scientific Publishing Company
Total Pages: 492
Release: 1994-10-31
Genre: Science
ISBN: 9813104783

This textbook presents the basic elements needed to understand and engage in research in semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. The fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, optical Stark effect, semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects are covered. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics. Request Inspection Copy

Iii-nitride Semiconductor Materials

Iii-nitride Semiconductor Materials
Author: Zhe Chuan Feng
Publisher: World Scientific
Total Pages: 442
Release: 2006-03-20
Genre: Technology & Engineering
ISBN: 1908979941

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a