High-Frequency Bipolar Transistors

High-Frequency Bipolar Transistors
Author: Michael Reisch
Publisher: Springer Science & Business Media
Total Pages: 671
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 364255900X

This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Silicon Devices and Process Integration

Silicon Devices and Process Integration
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
Total Pages: 614
Release: 2009-01-09
Genre: Technology & Engineering
ISBN: 0387690107

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

The Many-body Problem

The Many-body Problem
Author: Daniel Charles Mattis
Publisher: World Scientific
Total Pages: 992
Release: 1993
Genre: Science
ISBN: 9810214766

This book differs from its predecessor, Lieb & Mattis Mathematical Physics in One Dimension, in a number of important ways. Classic discoveries which once had to be omitted owing to lack of space ? such as the seminal paper by Fermi, Pasta and Ulam on lack of ergodicity of the linear chain, or Bethe's original paper on the Bethe ansatz ? can now be incorporated. Many applications which did not even exist in 1966 (some of which were originally spawned by the publication of Lieb & Mattis) are newly included. Among these, this new book contains critical surveys of a number of important developments: the exact solution of the Hubbard model, the concept of spinons, the Haldane gap in magnetic spin-one chains, bosonization and fermionization, solitions and the approach to thermodynamic equilibrium, quantum statistical mechanics, localization of normal modes and eigenstates in disordered chains, and a number of other contemporary concerns.

Mathematical Physics in One Dimension

Mathematical Physics in One Dimension
Author: Elliott H. Lieb
Publisher: Academic Press
Total Pages: 580
Release: 2013-09-17
Genre: Science
ISBN: 1483218562

Mathematical Physics in One Dimension: Exactly Soluble Models of Interacting Particles covers problems of mathematical physics with one-dimensional analogs. The book discusses classical statistical mechanics and phase transitions; the disordered chain of harmonic oscillators; and electron energy bands in ordered and disordered crystals. The text also describes the many-fermion problem; the theory of the interacting boson gas; the theory of the antiferromagnetic linear chains; and the time-dependent phenomena of many-body systems (i.e., classical or quantum-mechanical dynamics). Physicists and mathematicians will find the book invaluable.

FinFET Devices for VLSI Circuits and Systems

FinFET Devices for VLSI Circuits and Systems
Author: Samar K. Saha
Publisher: CRC Press
Total Pages: 283
Release: 2020-07-15
Genre: Technology & Engineering
ISBN: 0429998082

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Gate Dielectric Integrity

Gate Dielectric Integrity
Author: Dinesh C. Gupta
Publisher: ASTM International
Total Pages: 172
Release: 2000
Genre: Dielectrics
ISBN: 0803126158

Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.