The Gunn-Hilsum Effect

The Gunn-Hilsum Effect
Author: Melvin Shaw
Publisher: Elsevier
Total Pages: 269
Release: 2012-12-02
Genre: Technology & Engineering
ISBN: 0323141552

The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk semiconductor: boundary conditions or contacts and the local circuit environment. The opening chapter of this book discusses the negative differential mobility (NDM) characteristics for a range of electric fields in the velocity-field relation of specific semiconductors and the response of such a sample to a charge fluctuation, leading to the growth of stationary and/or traveling high electric field domains. The next two chapters describe how the boundary conditions and the circuit control the manifestation of current instabilities in such systems and how this control can be understood in a simple manner. Chapters 4 and 5 discuss the numerical and experimental investigations of comparatively long bulk samples, with an emphasis on the essential NDM semiconductor n-GaAs. These chapters also examine the production of different current-voltage relationships and instabilities by cathode contacts and the control of the oscillatory characteristics of an electrically unstable sample by different circuit conditions. Chapter 6 presents both time-independent and time-dependent computations, with the latter focusing on the small-signal impedance and stability aspects. The last chapter of this book addresses the construction and evaluation of typical short devices, describes how their oscillatory characteristics compare with the long samples studied in the first six chapters, and discusses the use of short devices as amplifiers. This book is an ideal source for device engineers and designers wishing to apply transferred electron devices in creative ways.

The Gunn Effect

The Gunn Effect
Author: G. S. Hobson
Publisher: Oxford University Press, USA
Total Pages: 152
Release: 1974
Genre: Technology & Engineering
ISBN:

Political Perversion

Political Perversion
Author: Joshua Gunn
Publisher: University of Chicago Press
Total Pages: 211
Release: 2020-09-04
Genre: Political Science
ISBN: 022671344X

When Trump became president, much of the country was repelled by what they saw as the vulgar spectacle of his ascent, a perversion of the highest office in the land. In his bold, innovative book, Political Perversion, rhetorician Joshua Gunn argues that this “mean-spirited turn” in American politics (of which Trump is the paragon) is best understood as a structural perversion in our common culture, on a continuum with infantile and “gotcha” forms of entertainment meant to engender provocation and sadistic enjoyment. Drawing on insights from critical theory, media ecology, and psychoanalysis, Gunn argues that perverse rhetorics dominate not only the political sphere but also our daily interactions with others, in person and online. From sexting to campaign rhetoric, Gunn advances a new way to interpret our contemporary political context that explains why so many of us have difficulty deciphering the appeal of aberrant public figures. In this book, Trump is only the tip of a sinister, rapidly growing iceberg, one to which we ourselves unwittingly contribute on a daily basis.

GaAs Devices and Circuits

GaAs Devices and Circuits
Author: Michael S. Shur
Publisher: Springer Science & Business Media
Total Pages: 677
Release: 2013-11-21
Genre: Technology & Engineering
ISBN: 1489919899

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Consequences of Growing Up Poor

Consequences of Growing Up Poor
Author: Greg J. Duncan
Publisher: Russell Sage Foundation
Total Pages: 673
Release: 1997-06-19
Genre: Social Science
ISBN: 161044826X

One in five American children now live in families with incomes below the povertyline, and their prospects are not bright. Low income is statistically linked with a variety of poor outcomes for children, from low birth weight and poor nutrition in infancy to increased chances of academic failure, emotional distress, and unwed childbirth in adolescence. To address these problems it is not enough to know that money makes a difference; we need to understand how. Consequences of Growing Up Poor is an extensive and illuminating examination of the paths through which economic deprivation damages children at all stages of their development. In Consequences of Growing Up Poor, developmental psychologists, economists, and sociologists revisit a large body of studies to answer specific questions about how low income puts children at risk intellectually, emotionally, and physically. Many of their investigations demonstrate that although income clearly creates disadvantages, it does so selectively and in a wide variety of ways. Low-income preschoolers exhibit poorer cognitive and verbal skills because they are generally exposed to fewer toys, books, and other stimulating experiences in the home. Poor parents also tend to rely on home-based child care, where the quality and amount of attention children receive is inferior to that of professional facilities. In later years, conflict between economically stressed parents increases anxiety and weakens self-esteem in their teenaged children. Although they share economic hardships, the home lives of poor children are not homogenous. Consequences of Growing Up Poor investigates whether such family conditions as the marital status, education, and involvement of parents mitigate the ill effects of poverty. Consequences of Growing Up Poor also looks at the importance of timing: Does being poor have a different impact on preschoolers, children, and adolescents? When are children most vulnerable to poverty? Some contributors find that poverty in the prenatal or early childhood years appears to be particularly detrimental to cognitive development and physical health. Others offer evidence that lower income has a stronger negative effect during adolescence than in childhood or adulthood. Based on their findings, the editors and contributors to Consequences of Growing Up Poor recommend more sharply focused child welfare policies targeted to specific eras and conditions of poor children's lives. They also weigh the relative need for income supplements, child care subsidies, and home interventions. Consequences of Growing Up Poor describes the extent and causes of hardships for poor children, defines the interaction between income and family, and offers solutions to improve young lives. JEANNE BROOKS-GUNN is Virginia and Leonard Marx Professor of Child Development at Teachers College, Columbia University. She is also director of the Center for Young Children and Families, and co-directs the Adolescent Study Program at Teachers College.

Summertime in Murdertown

Summertime in Murdertown
Author: David Gunn
Publisher: Flint Michigan Rules the World
Total Pages: 0
Release: 2019-04-29
Genre:
ISBN: 9781543959390

Born and raised in Flint, Michigan, David Gunn is proud to have grown up in a city facing constant adversity, and to represent a community whose government knowingly poisoned its citizens for years. Now, he pulls back the curtain on Flint--like only those born and raised there can do. His advice is poignant and timely, and urges readers to never stop working through the struggle. To not create a back-up plan, and to cross the bridge and burn it behind them. To define the things they want and run toward them.Like Laura Jane Grace's Tranny and Rob Rufus' Die Young With Me, Summertime in Murdertown is part memoir, part ethnography. It sheds light on what it means to grow up amid constant violence and poverty and serves as a voice to those struggling to survive as we navigate this unpredictable and often cruel world in search of inspiration.

Solid State Theory

Solid State Theory
Author: Walter A. Harrison
Publisher: Courier Corporation
Total Pages: 580
Release: 2012-04-30
Genre: Science
ISBN: 0486152235

DIVThorough, modern study of solid state physics; solid types and symmetry, electron states, electronic properties and cooperative phenomena. /div

The Physics of Instabilities in Solid State Electron Devices

The Physics of Instabilities in Solid State Electron Devices
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
Total Pages: 474
Release: 2013-11-11
Genre: Science
ISBN: 1489923446

The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.

Semiconductor Physics

Semiconductor Physics
Author: Karlheinz Seeger
Publisher: Springer Science & Business Media
Total Pages: 490
Release: 2013-04-17
Genre: Science
ISBN: 3662024454

It is a pleasure to take the opportunity to express my sincere grati tude to many colleagues who provided valuable hints for improvements, even including lists of misprints (which I hope have now been complete ly eliminated). It is not possible to name all of them, and so I will only mention the interesting discussions over so many years I had with Pro fessor Hans W. Pötzl of the Technical University of Vienna on the oc casion of our common weekly semiconductor seminar. I am grateful to Professor H.-J. Queisser and Professor M. Cardona for helpful criticism. Special thanks are due to Frau Jitka Fucik for typing and Frau Viktoria Köver for drawing services. The cooperation with Dr. H.K. Lotsch of Springer-Verlag has been a pleasure. Vienna, January 1982 K. Seeger Contents 1. Elementary Properties of Semiconductors . . .. I 1.1 Insulator - Semiconductor - Semimetal - Metal 1 1.2 The Positive Hole ... 3 1.3 Conduction Processes, Compensation, Law ofMass Action 4 Problems . 8 2. Energy Band Structure . 10 2.1 Single and Periodically Repeated Potential Well 10 2.2 Energy Bands by Tight Binding ofElectrons to Atoms 17 2.3 The Brillouin Zone 21 2.4 Constant Energy Surfaces 30 Problems . 33 3. Semiconductor Statistics 34 3.1 Fermi Statistics ... 35 3.2 Occupation Probabilities ofImpurity Levels 39 Problems . 45 4. Charge and Energy Transport in a Nondegenerate Electron Gas.