The Electronic Structure Of Metal Semiconductor Contacts
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| Author | : Winfried Mönch |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 302 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9400906579 |
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
| Author | : Winfried Monch |
| Publisher | : |
| Total Pages | : 312 |
| Release | : 1990-11-30 |
| Genre | : |
| ISBN | : 9789400906587 |
| Author | : Giorgio Margaritondo |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 348 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9400930739 |
E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
| Author | : Winfried Mönch |
| Publisher | : Springer Nature |
| Total Pages | : 156 |
| Release | : 2024 |
| Genre | : Condensed matter |
| ISBN | : 3031590643 |
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.
| Author | : Enrique Abad |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 211 |
| Release | : 2012-09-15 |
| Genre | : Science |
| ISBN | : 3642309070 |
In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them because they underestimate the organic energy gap and fail to correctly describe the van der Waals forces. Since the size of these systems prohibits the use of more accurate methods, corrections to those DFT drawbacks are desirable. In this work a combination of a standard DFT calculation with the inclusion of the charging energy (U) of the molecule, calculated from first principles, is presented. Regarding the dispersion forces, incorrect long range interaction is substituted by a van der Waals potential. With these corrections, the C60, benzene, pentacene, TTF and TCNQ/Au(111) interfaces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model.
| Author | : Seth R Marder |
| Publisher | : World Scientific |
| Total Pages | : 896 |
| Release | : 2016-06-24 |
| Genre | : Science |
| ISBN | : 9814699241 |
This 2-volume set provides the reader with a basic understanding of the foundational concepts pertaining to the design, synthesis, and applications of conjugated organic materials used as organic semiconductors, in areas including organic photovoltaic devices, light-emitting diodes, field-effect transistors, spintronics, actuation, bioelectronics, thermoelectrics, and nonlinear optics.While there are many monographs in these various areas, the emphasis here is both on the fundamental chemistry and physics concepts underlying the field of organic semiconductors and on how these concepts drive a broad range of applications. This makes the volumes ideal introductory textbooks in the subject. They will thus offer great value to both junior and senior scientists working in areas ranging from organic chemistry to condensed matter physics and materials science and engineering.Number of Illustrations and Tables: 168 b/w illus., 242 colour illus., 13 tables.
| Author | : |
| Publisher | : Elsevier |
| Total Pages | : 1071 |
| Release | : 2000-07-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0080530753 |
This book is the second volume in the Handbook of Surface Science series and deals with aspects of the electronic structure of surfaces as investigated by means of the experimental and theoretical methods of physics. The importance of understanding surface phenomena stems from the fact that for many physical and chemical phenomena, the surface plays a key role: in electronic, magnetic, and optical devices, in heterogenous catalysis, in epitaxial growth, and the application of protective coatings, for example. Therefore a better understanding and, ultimately, a predictive description of surface and interface properties is vital for the progress of modern technology. An investigation of surface electronic structure is also central to our understanding of all aspects of surfaces from a fundamental point of view. The chapters presented here review the goals achieved in the field and map out the challenges ahead, both in experiment and theory.
| Author | : S. Mahajan |
| Publisher | : Elsevier |
| Total Pages | : 607 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1483286576 |
The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
| Author | : Norbert Koch |
| Publisher | : John Wiley & Sons |
| Total Pages | : 257 |
| Release | : 2013-02-08 |
| Genre | : Science |
| ISBN | : 3527653198 |
Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface. The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electronic structure of the molecule-metal interface. In the closing chapter the editors discuss future perspectives. Written as a senior graduate or senior undergraduate textbook for students in physics, chemistry, materials science or engineering, the book's interdisciplinary approach makes it equally relevant for researchers working in the field of organic and molecular electronics.
| Author | : D S Wang |
| Publisher | : World Scientific |
| Total Pages | : 302 |
| Release | : 1990-11-02 |
| Genre | : Science |
| ISBN | : 9814611379 |
This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.
