The Electron Transport Within The Wide Energy Gap Compound Semiconductors Gallium Nitride And Zinc Oxide
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Oxide and Nitride Semiconductors
Author | : Takafumi Yao |
Publisher | : Springer Science & Business Media |
Total Pages | : 525 |
Release | : 2009-03-20 |
Genre | : Technology & Engineering |
ISBN | : 3540888470 |
This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Gallium Nitride and Silicon Carbide Power Technologies 7
Author | : M. Dudley |
Publisher | : The Electrochemical Society |
Total Pages | : 297 |
Release | : |
Genre | : |
ISBN | : 1607688247 |
Transient Electron Transport in Gallium Nitride Using the Space Charge Limited Current Technique and an Optical Source
Author | : Damian D. Watkins |
Publisher | : |
Total Pages | : 46 |
Release | : 2000 |
Genre | : Gallium nitride |
ISBN | : |
Gallium Nitride is currently promoted as one of the most promising wide band-gap semiconductors for the development of optoelectronic devices that operate in the blue to ultraviolet spectrums. In order to fabricate optimal devices, materials properties need to be characterized. The feasibility of devices depends greatly on the carrier transport properties within the material. The most import property is electron/hole drift mobility, which is the relative ease of a carrier to move through the material. -- Abstract.
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Author | : Yue Hao |
Publisher | : CRC Press |
Total Pages | : 325 |
Release | : 2016-11-03 |
Genre | : Computers |
ISBN | : 1315351838 |
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Venturing Through the Forbidden Band
Author | : |
Publisher | : |
Total Pages | : 44 |
Release | : 2004 |
Genre | : |
ISBN | : |
Over the past three decades, industry and the U.S. Government have invested hundreds of millions of dollars in an emerging area called wide-bandgap materials. The technical significance of these materials is that they can be made into semiconductor devices capable of handling much higher voltages than silicon, while withstanding and operating at much higher temperatures. Such materials also have unique optoelectronic capabilities that allow them to emit blue and UV light. Thus, many aspects of our lives can be touched by transistors and diodes made from a new class of materials. What makes a semiconductor wide bandgap ? The answer remains at the atomic level of the material. A range of energies called the forbidden band separates the valence band and the conduction band of a solid-state material. The valence and conduction bands hold electrons; however, no electrons may reside in the forbidden band. When the forbidden band is wider, more energy is required to promote an electron from the valence band into the conduction band. If a material has no forbidden band (i.e., the conduction band is the valence band), it behaves as metal. If it has a very wide band, it is a good insulator. Semiconductors lie somewhere in the middle. When we speak of wide-bandgap materials, we are referring to gallium nitride (GaN), silicon carbide (SiC), and other compound semiconductors that have a relatively wide forbidden band (on the order of between 1.7 and 7 electron volts) compared with silicon and gallium arsenide. More work is still needed for this technology to be available for many of the applications mentioned in this publication. Issues such as gate leakage and defect densities (which affect wafer size) need to be addressed.
Some Electron Transport Properties of Two Wide Bandgap Semiconductors, Gallium Phosphide and Indium Gallium Phosphide
Author | : Ralph Herbert Johnson |
Publisher | : |
Total Pages | : 232 |
Release | : 1985 |
Genre | : Electron transport |
ISBN | : |