The Electrical Characterization Of Semiconductors
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| Author | : John Wilfred Orton |
| Publisher | : |
| Total Pages | : 320 |
| Release | : 1990 |
| Genre | : Science |
| ISBN | : |
This is the first comprehensive and unified treatment to describe the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials. By concentrating on the physical principles of each technique and enumerating its inherent limitations the authors have produced a text that will be helpful in solving a variety of problems in semiconductor characterization and one that will not be quickly outdated by developments in the materials themselves. Emphasizes the physics and theory underlying the experimental characterization of semicondutors**Deals with the measurement of minority lifetimes and diffusion length**Discusses electrical and optical methods***INCLUDED IN PHYSICS TODAY, SEPT 90***INCLUDED IN MRS BULLETIN, NOVEMBER 90***INCLUDED IN JRNL OF VACUUM SCI, DECEMBER 90***INCLUDED IN PHYSICS TODAY, FEBRUARY 91
| Author | : Giovanni Agostini |
| Publisher | : Elsevier |
| Total Pages | : 501 |
| Release | : 2011-08-11 |
| Genre | : Science |
| ISBN | : 0080558151 |
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
| Author | : Dieter K. Schroder |
| Publisher | : John Wiley & Sons |
| Total Pages | : 800 |
| Release | : 2015-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0471739065 |
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
| Author | : Peter Blood |
| Publisher | : |
| Total Pages | : 774 |
| Release | : 1992 |
| Genre | : Technology & Engineering |
| ISBN | : |
Describes the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials.
| Author | : Safa Kasap |
| Publisher | : Springer |
| Total Pages | : 1536 |
| Release | : 2017-10-04 |
| Genre | : Technology & Engineering |
| ISBN | : 331948933X |
The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
| Author | : Richard Haight |
| Publisher | : World Scientific |
| Total Pages | : 346 |
| Release | : 2012 |
| Genre | : Science |
| ISBN | : 9814322849 |
As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
| Author | : Professor Peter Stallinga |
| Publisher | : John Wiley & Sons |
| Total Pages | : 316 |
| Release | : 2009-10-08 |
| Genre | : Technology & Engineering |
| ISBN | : 0470750170 |
Think like an electron Organic electronic materials have many applications and potential in low-cost electronics such as electronic barcodes and in light emitting devices, due to their easily tailored properties. While the chemical aspects and characterization have been widely studied, characterization of the electrical properties has been neglected, and classic textbook modeling has been applied. This is most striking in the analysis of thin-film transistors (TFTs) using thick “bulk” transistor (MOS-FET) descriptions. At first glance the TFTs appear to behave as regular MOS-FETs. However, upon closer examination it is clear that TFTs are unique and merit their own model. Understanding and interpreting measurements of organic devices, which are often seen as black-box measurements, is critical to developing better devices and this, therefore, has to be done with care. Electrical Characterization of Organic Electronic Materials and Devices Gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices Characterizes the thin-film transistor using its own model Links the phenomena seen in different device structures and different measurement techniques Presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements Provides a much-needed theoretical foundation for organic electronics
| Author | : M.O. Manasreh |
| Publisher | : Elsevier |
| Total Pages | : 463 |
| Release | : 2000-12-06 |
| Genre | : Science |
| ISBN | : 0080534449 |
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
| Author | : Sidney Perkowitz |
| Publisher | : Elsevier |
| Total Pages | : 229 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0080984274 |
This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time.Discusses and compares infrared, Raman, and photoluminescence methodsEnables readers to choose the best method for a given problemIllustrates applications to help non-experts and industrial users, with answers to selected common problemsPresents fundamentals with examples from the semiconductor literature without excessive abstract discussionFeatures equipment lists and discussion of techniques to help establish characterization laboratories
| Author | : Sergei V. Kalinin |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 1002 |
| Release | : 2007-04-03 |
| Genre | : Technology & Engineering |
| ISBN | : 0387286683 |
This volume will be devoted to the technical aspects of electrical and electromechanical SPM probes and SPM imaging on the limits of resolution, thus providing technical introduction into the field. This volume will also address the fundamental physical phenomena underpinning the imaging mechanism of SPMs.
