Surface Passivation And Junction Engineering In Silicon
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Author | : Gaurav Thareja |
Publisher | : Stanford University |
Total Pages | : 99 |
Release | : 2011 |
Genre | : |
ISBN | : |
The planar silicon MOSFET is facing diminishing performance returns in improvement from device geometry scaling. Two alternative devices are being explored as possible solutions to this problem. The first contender is a multi-gate device (FINFET or surround gate) and the other is a MOSFET with high mobility channel material such as germanium, III-V or carbon. Ge has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this work, the unique properties of surface passivation enabled by radical oxidation are discussed. Some of the highlights are low temperature processing, substrate orientation independent growth rate of dielectric and low interface density. Subsequently, this radical oxidation is applied to 3D vertical gate all around (GAA) silicon MOSFET devices. Higher drive current, lower gate leakage and higher gate dielectric breakdown voltage are demonstrated for GAA devices using radical oxidation in comparison to thermal oxidation In the second part, radical oxidation is investigated for GeO2 growth as an interfacial layer in high-k / Ge gate stack. Using MOSCAP and n-MOSFET devices on Ge, low interface state density combined with drive current and electron mobility enhancement is demonstrated for Ge devices. In the third part, the source/drain junctions for Ge are studied. Ultra-shallow junctions using plasma immersion ion implantation are demonstrated. High n-type dopant activation in Ge using laser annealing is realized along with high performance diodes, significant reduction of contact resistance and integration in a MOSFET process flow.
Author | : Thomas Mueller |
Publisher | : Logos Verlag Berlin GmbH |
Total Pages | : 280 |
Release | : 2009 |
Genre | : Technology & Engineering |
ISBN | : 3832522913 |
The main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers, and the sufficient surface passivation of all interfaces. In heterojunction solar cells, the a-Si: H/c-Si hetero-interface is of significant importance, since the hetero-interface characteristics directly affect the junction properties and thus solar cell efficiency. In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC: H, a-SiO_x: H, and muc-Si: H (standard a-Si: H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiO_x: H), and (ii) the influence of wide-gap high-quality a-Si- and muc-Si-based alloys for use as emitter and back-surface-
Author | : Lachlan E. Black |
Publisher | : Springer |
Total Pages | : 222 |
Release | : 2016-04-15 |
Genre | : Technology & Engineering |
ISBN | : 3319325213 |
The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.
Author | : V. Narayanan |
Publisher | : The Electrochemical Society |
Total Pages | : 367 |
Release | : 2009-05 |
Genre | : Gate array circuits |
ISBN | : 1566777097 |
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author | : Roberto Murri |
Publisher | : Bentham Science Publishers |
Total Pages | : 524 |
Release | : 2013-03-20 |
Genre | : Technology & Engineering |
ISBN | : 160805456X |
Silicon Based Thin Film Solar Cells explains concepts related to technologies for silicon (Si) based photovoltaic applications. Topics in this book focus on ‘new concept’ solar cells. These kinds of cells can make photovoltaic power production an economically viable option in comparison to the bulk crystalline semiconductor technology industry. A transition from bulk crystalline Si solar cells toward thin-film technologies reduces usage of active material and introduces new concepts based on nanotechnologies. Despite its importance, the scientific development and understanding of new solar cells is not very advanced, and educational resources for specialized engineers and scientists are required. This textbook presents the fundamental scientific aspects of Si thin films growth technology, together with a clear understanding of the properties of the material and how this is employed in new generation photovoltaic solar cells. The textbook is a valuable resource for graduate students working on their theses, young researchers and all people approaching problems and fundamental aspects of advanced photovoltaic conversion.
Author | : Yang Xu |
Publisher | : John Wiley & Sons |
Total Pages | : 197 |
Release | : 2023-01-18 |
Genre | : Technology & Engineering |
ISBN | : 3527841008 |
Graphene for Post-Moore Silicon Optoelectronics Provides timely coverage of an important research area that is highly relevant to advanced detection and control technology Projecting device performance beyond the scaling limits of Moore’s law requires technologies based on novel materials and device architecture. Due to its excellent electronic, thermal, and optical properties, graphene has emerged as a scalable, low-cost material with enormous integration possibilities for numerous optoelectronic applications. Graphene for Post-Moore Silicon Optoelectronics presents an up-to-date overview of the fundamentals, applications, challenges, and opportunities of integrating graphene and other 2D materials with silicon (Si) technologies. With an emphasis on graphene-silicon (Gr/Si) integrated devices in optoelectronics, this valuable resource also addresses emerging applications such as optoelectronic synaptic devices, optical modulators, and infrared image sensors. The book opens with an introduction to graphene for silicon optoelectronics, followed by chapters describing the growth, transfer, and physics of graphene/silicon junctions. Subsequent chapters each focus on a particular Gr/Si application, including high-performance photodetectors, solar energy harvesting devices, and hybrid waveguide devices. The book concludes by offering perspectives on the future challenges and prospects of Gr/Si optoelectronics, including the emergence of wafer-scale systems and neuromorphic optoelectronics. Illustrates the benefits of graphene-based electronics and hybrid device architectures that incorporate existing Si technology Covers all essential aspects of Gr/Si devices, including material synthesis, device fabrication, system integration, and related physics Summarizes current progress and future challenges of wafer-scale 2D-Si integrated optoelectronic devices Explores a wide range of Gr/Si devices, such as synaptic phototransistors, hybrid waveguide modulators, and graphene thermopile image sensors Graphene for Post-Moore Silicon Optoelectronics is essential reading for materials scientists, electronics engineers, and chemists in both academia and industry working with the next generation of Gr/Si devices.
Author | : |
Publisher | : |
Total Pages | : 316 |
Release | : 1991 |
Genre | : Aeronautics |
ISBN | : |
Author | : Klaus D. Sattler |
Publisher | : CRC Press |
Total Pages | : 643 |
Release | : 2017-07-28 |
Genre | : Science |
ISBN | : 1498763871 |
This comprehensive tutorial guide to silicon nanomaterials spans from fundamental properties, growth mechanisms, and processing of nanosilicon to electronic device, energy conversion and storage, biomedical, and environmental applications. It also presents core knowledge with basic mathematical equations, tables, and graphs in order to provide the reader with the tools necessary to understand the latest technology developments. From low-dimensional structures, quantum dots, and nanowires to hybrid materials, arrays, networks, and biomedical applications, this Sourcebook is a complete resource for anyone working with this materials: Covers fundamental concepts, properties, methods, and practical applications. Focuses on one important type of silicon nanomaterial in every chapter. Discusses formation, properties, and applications for each material. Written in a tutorial style with basic equations and fundamentals included in an extended introduction. Highlights materials that show exceptional properties as well as strong prospects for future applications. Klaus D. Sattler is professor physics at the University of Hawaii, Honolulu, having earned his PhD at the Swiss Federal Institute of Technology (ETH) in Zurich. He was honored with the Walter Schottky Prize from the German Physical Society, and is the editor of the sister work also published by Taylor & Francis, Carbon Nanomaterials Sourcebook, as well as the acclaimed multi-volume Handbook of Nanophysics.
Author | : David Huang |
Publisher | : The Electrochemical Society |
Total Pages | : 1124 |
Release | : 2009-03 |
Genre | : Science |
ISBN | : 1566777038 |
ISTC/CSTIC is an annual semiconductor technology conference covering all the aspects of semiconductor technology and manufacturing, including devices, design, lithography, integration, materials, processes, manufacturing as well as emerging semiconductor technologies and silicon material applications. ISTC/CSTIC 2009 was merged by ISTC (International Semiconductor Technology Conference) and CSTIC (China Semiconductor Technology International Conference), the two industry leading technical conferences in China, and consisted of one plenary session and nine technical symposia. This issue of ECS Transactions contains 159 papers from the conference.
Author | : Defense Documentation Center (U.S.) |
Publisher | : |
Total Pages | : 180 |
Release | : 1962 |
Genre | : Miniature electronic equipment |
ISBN | : |