Surface Electronic Transport Phenomena In Semiconductors
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Author | : B. M. Askerov |
Publisher | : World Scientific |
Total Pages | : 416 |
Release | : 1994 |
Genre | : Technology & Engineering |
ISBN | : 9789810212834 |
This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Author | : V. N. Dobrovolsky |
Publisher | : |
Total Pages | : 248 |
Release | : 1991-09-26 |
Genre | : Science |
ISBN | : |
Layered metal-insulator-semiconductor microstructures have become an important research area in semiconductor microelectronics. New devices utilize phenomena occuring at or near the semiconductor surface directly. This monograph provides a survey of the diverse experimental and theoretical results for electron and hole transport in surface and subsurface regions of semiconductors, with an emphasis on the mechanisms involved and special measurement procedures necessary, for example in Hall current measurements. This English edition has been substantially revised and updated from the original Russian edition.
Author | : J.M. Ziman |
Publisher | : Oxford University Press |
Total Pages | : 572 |
Release | : 2001-02 |
Genre | : Science |
ISBN | : 9780198507796 |
This is a classic text of its time in condensed matter physics.
Author | : Prasanta Kumar Basu |
Publisher | : Oxford University Press |
Total Pages | : 470 |
Release | : 2003 |
Genre | : Science |
ISBN | : 0198526202 |
Semiconductor optoelectronic devices are at the heart of all information generation and processing systems and are likely to be essential components of future optical computers. With more emphasis on optoelectronics and photonics in graduate programmes in physics and engineering, there is aneed for a text providing a basic understanding of the important physical phenomena involved. Such a training is necessary for the design, optimization, and search for new materials, devices, and application areas. This book provides a simple quantum mechanical theory of important optical processes,i.e. band-to-band, intersubband, and excitonic absorption and recombination in bulk, quantum wells, wires, dots, superlattices, and strained layers including electro-optic effects. The classical theory of absorption, quantization of radiation, and band picture based on k.p perturbation has beenincluded to provide the necessary background. Prerequisites for the book are a knowledge of quantum mechanics and solid state theory. Problems have been set at the end of each chapter, some of which may guide the reader to study processes not covered in the book. The application areas of thephenomena are also indicated.
Author | : N. Balkan |
Publisher | : |
Total Pages | : 536 |
Release | : 1998 |
Genre | : Science |
ISBN | : 9780198500582 |
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Author | : Thomas Ihn |
Publisher | : Oxford University Press |
Total Pages | : 569 |
Release | : 2010 |
Genre | : Language Arts & Disciplines |
ISBN | : 019953442X |
This introduction to the physics of semiconductor nanostructures and their transport properties emphasizes five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect and the Coulomb blockade effect.
Author | : Tibor Grasser |
Publisher | : Springer Science & Business Media |
Total Pages | : 472 |
Release | : 2007-11-18 |
Genre | : Technology & Engineering |
ISBN | : 3211728619 |
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author | : Sadamichi Maekawa |
Publisher | : OUP Oxford |
Total Pages | : 416 |
Release | : 2006-01-26 |
Genre | : Technology & Engineering |
ISBN | : 0191524492 |
Nowadays information technology is based on semiconductor and ferromagnetic materials. Information processing and computation are based on electron charge in semiconductor transistors and integrated circuits, and information is stored on magnetic high-density hard disks based on the physics of the electron spins. Recently, a new branch of physics and nanotechnology, called magneto-electronics, spintronics, or spin electronics, has emerged, which aims at simultaneously exploiting both the charge and the spin of electrons in the same device. A broader goal is to develop new functionality that does not exist separately in a ferromagnet or a semiconductor. The aim of this book is to present new directions in the development of spin electronics in both the basic physics and the technology which will become the foundation of future electronics.
Author | : M. M. Glazov |
Publisher | : Oxford University Press |
Total Pages | : 320 |
Release | : 2018-09-05 |
Genre | : Science |
ISBN | : 0192534211 |
In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, the solid state systems, particularly, semiconductors and semiconductor nanosystems, allow us to perform benchtop studies of quantum and relativistic phenomena. On the other hand, this interest is supported by the prospects of realizing spin-based electronics, where the electron or nuclear spins may play a role of quantum or classical information carriers. This book looks in detail at the physics of interacting systems of electron and nuclear spins in semiconductors, with particular emphasis on low-dimensional structures. These two spin systems naturally appear in practically all widespread semiconductor compounds. The hyperfine interaction of the charge carriers and nuclear spins is particularly prominent in nanosystems due to the localization of the charge carriers, and gives rise to spin exchange between these two systems and a whole range of beautiful and complex physics of manybody and nonlinear systems. As a result, understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and controlling the spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and spin-Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focussing, as well as fluctuations of electron and nuclear spins.
Author | : Helmuth Spieler |
Publisher | : OUP Oxford |
Total Pages | : 513 |
Release | : 2005-08-25 |
Genre | : Technology & Engineering |
ISBN | : 0191523658 |
Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.