Strained Layer Superlattices
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| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 443 |
| Release | : 1991-02-20 |
| Genre | : Technology & Engineering |
| ISBN | : 0080864309 |
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
| Author | : Thomas P. Pearsall |
| Publisher | : |
| Total Pages | : |
| Release | : |
| Genre | : |
| ISBN | : |
| Author | : Fernando Agullo-rueda |
| Publisher | : World Scientific |
| Total Pages | : 269 |
| Release | : 1995-04-17 |
| Genre | : Science |
| ISBN | : 9814501255 |
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
| Author | : Raphael Tsu |
| Publisher | : Elsevier |
| Total Pages | : 346 |
| Release | : 2010-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 0080968147 |
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
| Author | : Robert M. Biefeld |
| Publisher | : |
| Total Pages | : 248 |
| Release | : 1989 |
| Genre | : Science |
| ISBN | : |
Coverage includes: ion implantation; semiconductor characterization; and gallium arsenide.
| Author | : E.E. Mendez |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 456 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 1468454781 |
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
| Author | : I. Ohdomari |
| Publisher | : Elsevier |
| Total Pages | : 600 |
| Release | : 2017-05-03 |
| Genre | : Science |
| ISBN | : 1483290484 |
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
| Author | : Robert K. Willardson |
| Publisher | : |
| Total Pages | : 431 |
| Release | : 1992 |
| Genre | : Semiconductors |
| ISBN | : 9780127521336 |
| Author | : M. O. Manasreh |
| Publisher | : CRC Press |
| Total Pages | : 523 |
| Release | : 2019-08-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1000717488 |
Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
| Author | : |
| Publisher | : |
| Total Pages | : 840 |
| Release | : 1990 |
| Genre | : Power resources |
| ISBN | : |
