Processes at the Semiconductor-Solution Interface 4

Processes at the Semiconductor-Solution Interface 4
Author: C. O'Dwyer
Publisher: The Electrochemical Society
Total Pages: 236
Release: 2011-04
Genre: Science
ISBN: 1566778697

The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).

Failure-Free Integrated Circuit Packages

Failure-Free Integrated Circuit Packages
Author: Charles Cohn
Publisher: McGraw Hill Professional
Total Pages: 394
Release: 2005
Genre: Technology & Engineering
ISBN: 9780071434843

The shrinking of integrated circuits (ICs) puts tremendous stress on overall device reliability. This unique treatment uses graphic illustration to clearly identify all major failure mode types, so engineers can spot failures before they occur.

Book Review Index

Book Review Index
Author:
Publisher:
Total Pages: 1080
Release: 2005
Genre: Books
ISBN:

Every 3rd issue is a quarterly cumulation.

SiC Materials and Devices

SiC Materials and Devices
Author: Michael Shur
Publisher: World Scientific
Total Pages: 143
Release: 2007
Genre: Science
ISBN: 9812703837

Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.