Special Issue Papers On 2003 Ieee Silicon Nanoelectronics
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| Author | : Sergey Edward Lyshevski |
| Publisher | : CRC Press |
| Total Pages | : 912 |
| Release | : 2018-10-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1420008145 |
There are fundamental and technological limits of conventional microfabrication and microelectronics. Scaling down conventional devices and attempts to develop novel topologies and architectures will soon be ineffective or unachievable at the device and system levels to ensure desired performance. Forward-looking experts continue to search for new paradigms to carry the field beyond the age of microelectronics, and molecular electronics is one of the most promising candidates. The Nano and Molecular Electronics Handbook surveys the current state of this exciting, emerging field and looks toward future developments and opportunities. Molecular and Nano Electronics Explained Explore the fundamentals of device physics, synthesis, and design of molecular processing platforms and molecular integrated circuits within three-dimensional topologies, organizations, and architectures as well as bottom-up fabrication utilizing quantum effects and unique phenomena. Technology in Progress Stay current with the latest results and practical solutions realized for nanoscale and molecular electronics as well as biomolecular electronics and memories. Learn design concepts, device-level modeling, simulation methods, and fabrication technologies used for today's applications and beyond. Reports from the Front Lines of Research Expert innovators discuss the results of cutting-edge research and provide informed and insightful commentary on where this new paradigm will lead. The Nano and Molecular Electronics Handbook ranks among the most complete and authoritative guides to the past, present, and future of this revolutionary area of theory and technology.
| Author | : Gianaurelio Cuniberti |
| Publisher | : Springer |
| Total Pages | : 526 |
| Release | : 2006-05-21 |
| Genre | : Science |
| ISBN | : 3540315144 |
Klaus von Klitzing Max-Planck-Institut fur ̈ Festk ̈ orperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany Already many Cassandras have prematurely announced the end of the silicon roadmap and yet, conventional semiconductor-based transistors have been continuously shrinking at a pace which has brought us to nowadays cheap and powerful microelectronics. However it is clear that the traditional scaling laws cannot be applied if unwanted tunnel phenomena or ballistic transport dominate the device properties. It is generally expected, that a combination of silicon CMOS devices with molecular structure will dominate the ?eld of nanoelectronics in 20 years. The visionary ideas of atomic- or molecular-scale electronics already date back thirty years but only recently advanced nanotechnology, including e.g. scanning tunneling methods and mechanically controllable break junctions, have enabled to make distinct progress in this direction. On the level of f- damentalresearch,stateofthearttechniquesallowtomanipulate,imageand probechargetransportthroughuni-molecularsystemsinanincreasinglyc- trolled way. Hence, molecular electronics is reaching a stage of trustable and reproducible experiments. This has lead to a variety of physical and chemical phenomena recently observed for charge currents owing through molecular junctions, posing new challenges to theory. As a result a still increasing n- ber of open questions determines the future agenda in this ?eld.
| Author | : David Esseni |
| Publisher | : Cambridge University Press |
| Total Pages | : 489 |
| Release | : 2011-01-20 |
| Genre | : Technology & Engineering |
| ISBN | : 1139494384 |
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
| Author | : Sami Franssila |
| Publisher | : John Wiley & Sons |
| Total Pages | : 424 |
| Release | : 2005-01-28 |
| Genre | : Technology & Engineering |
| ISBN | : 0470020563 |
Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.
| Author | : Shunri Oda |
| Publisher | : CRC Press |
| Total Pages | : 328 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1420028642 |
Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology. Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon. Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them. In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in
| Author | : Barbara de Salvo |
| Publisher | : John Wiley & Sons |
| Total Pages | : 222 |
| Release | : 2013-05-10 |
| Genre | : Technology & Engineering |
| ISBN | : 1118617800 |
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
| Author | : Junghuei Chen |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 384 |
| Release | : 2006-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 3540302964 |
Nanoscale science and computing is becoming a major research area as today's scientists try to understand the processes of natural and biomolecular computing. The field is concerned with the architectures and design of molecular self-assembly, nanostructures and molecular devices, and with understanding and exploiting the computational processes of biomolecules in nature. This book offers a unique and authoritative perspective on current research in nanoscale science, engineering and computing. Leading researchers cover the topics of DNA self-assembly in two-dimensional arrays and three-dimensional structures, molecular motors, DNA word design, molecular electronics, gene assembly, surface layer protein assembly, and membrane computing. The book is suitable for academic and industrial scientists and engineers working in nanoscale science, in particular researchers engaged with the idea of computing at a molecular level.
| Author | : Saraju Mohanty |
| Publisher | : McGraw Hill Professional |
| Total Pages | : 829 |
| Release | : 2015-02-20 |
| Genre | : Technology & Engineering |
| ISBN | : 0071823034 |
Covering both the classical and emerging nanoelectronic technologies being used in mixed-signal design, this book addresses digital, analog, and memory components. Winner of the Association of American Publishers' 2016 PROSE Award in the Textbook/Physical Sciences & Mathematics category. Nanoelectronic Mixed-Signal System Design offers professionals and students a unified perspective on the science, engineering, and technology behind nanoelectronics system design. Written by the director of the NanoSystem Design Laboratory at the University of North Texas, this comprehensive guide provides a large-scale picture of the design and manufacturing aspects of nanoelectronic-based systems. It features dual coverage of mixed-signal circuit and system design, rather than just digital or analog-only. Key topics such as process variations, power dissipation, and security aspects of electronic system design are discussed. Top-down analysis of all stages--from design to manufacturing Coverage of current and developing nanoelectronic technologies--not just nano-CMOS Describes the basics of nanoelectronic technology and the structure of popular electronic systems Reveals the techniques required for design excellence and manufacturability
| Author | : M Wuttig |
| Publisher | : World Scientific |
| Total Pages | : 549 |
| Release | : 2004-06-08 |
| Genre | : Science |
| ISBN | : 9814483125 |
Thin films science and technology plays an important role in the high-tech industries. Thin film technology has been developed primarily for the need of the integrated circuit industry. The demand for development of smaller and smaller devices with higher speed especially in new generation of integrated circuits requires advanced materials and new processing techniques suitable for future giga scale integration (GSI) technology. In this regard, physics and technology of thin films can play an important role to acheive this goal. The production of thin films for device purposes has been developed over the past 40 years. Thin films as a two dimensional system are of great importance to many real-world problems. Their material costs are very small as compared to the corresponding bulk material and they perform the same function when it comes to surface processes. Thus, knowledge and determination of the nature, functions and new properties of thin films can be used for the development of new technologies for future applications.Thin film technology is based on three foundations: fabrication, characterization and applications. Some of the important applications of thin films are microelectronics, communication, optical electronics, catalysis, coating of all kinds, and energy generation and conservation strategies.This book emphasizes the importance of thin films and their properties for the new technologies. It presents basic principles, processes techniques and applications of thin films. As thin films physics and technology is a multidisciplinary field, the book will be useful to a wide varity of readers (especially young researcher) in physics, electronic engineering, material science and metallurgy.
| Author | : James E. Morris |
| Publisher | : CRC Press |
| Total Pages | : 942 |
| Release | : 2017-11-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1351831976 |
Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
