Fundamentals of Semiconductors

Fundamentals of Semiconductors
Author: Peter YU
Publisher: Springer Science & Business Media
Total Pages: 651
Release: 2007-05-08
Genre: Technology & Engineering
ISBN: 3540264752

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

The British Chess Magazine; Volume 16

The British Chess Magazine; Volume 16
Author: Anonymous
Publisher: Legare Street Press
Total Pages: 0
Release: 2022-10-27
Genre:
ISBN: 9781016407649

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Electromagnetics in a Complex World

Electromagnetics in a Complex World
Author: Innocenzo Pinto
Publisher: Springer Science & Business Media
Total Pages: 327
Release: 2012-12-06
Genre: Science
ISBN: 3642185967

Provides the state of the art of modelling, simulation and calculation methods for electromagnetic fields and waves and their application.

Time Domain Methods in Electrodynamics

Time Domain Methods in Electrodynamics
Author: Peter Russer
Publisher: Springer Science & Business Media
Total Pages: 423
Release: 2008-09-26
Genre: Technology & Engineering
ISBN: 3540687688

This book consists of contributions given in honor of Wolfgang J.R. Hoefer. Space and time discretizing time domain methods for electromagnetic full-wave simulation have emerged as key numerical methods in computational electromagnetics. Time domain methods are versatile and can be applied to the solution of a wide range of electromagnetic field problems. Computing the response of an electromagnetic structure to an impulsive excitation localized in space and time provides a comprehensive characterization of the electromagnetic properties of the structure in a wide frequency range. The most important methods are the Finite Difference Time Domain (FDTD) and the Transmission Line Matrix (TLM) methods. The contributions represent the state of the art in dealing with time domain methods in modern engineering electrodynamics for electromagnetic modeling in general, the Transmission Line Matrix (TLM) method, the application of network concepts to electromagnetic field modeling, circuit and system applications and, finally, with broadband devices, systems and measurement techniques.

Optical Properties of Semiconductor Nanostructures

Optical Properties of Semiconductor Nanostructures
Author: Marcin L. Sadowski
Publisher: Springer Science & Business Media
Total Pages: 470
Release: 2000-06-30
Genre: Science
ISBN: 9780792363163

Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.

Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials
Author: Meiyong Liao
Publisher: Elsevier
Total Pages: 506
Release: 2019-06-18
Genre: Technology & Engineering
ISBN: 0128172568

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Nanowire Field-Effect Transistor (FET).

Nanowire Field-Effect Transistor (FET).
Author: Antonio García-Loureiro
Publisher:
Total Pages: 96
Release: 2021
Genre:
ISBN: 9783039362097

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Semiconductor Quantum Dots

Semiconductor Quantum Dots
Author: Y. Masumoto
Publisher: Springer Science & Business Media
Total Pages: 500
Release: 2013-04-17
Genre: Technology & Engineering
ISBN: 3662050013

Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. Recent years have witnessed the discovery of many striking new aspects of the optical response and electronic transport phenomena. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots. It focuses especially on excitons, multi-excitons, their dynamical relaxation behaviour and their interactions with the surroundings of a semiconductor quantum dot. Recent developments in fabrication techniques are reviewed and potential applications discussed. This book will serve not only as an introductory textbook for graduate students but also as a concise guide for active researchers.