Some Electron Transport Properties of Two Wide Bandgap Semiconductors, Gallium Phosphide and Indium Gallium Phosphide
Author | : Ralph Herbert Johnson |
Publisher | : |
Total Pages | : 232 |
Release | : 1985 |
Genre | : Electron transport |
ISBN | : |
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Author | : Ralph Herbert Johnson |
Publisher | : |
Total Pages | : 232 |
Release | : 1985 |
Genre | : Electron transport |
ISBN | : |
Author | : Louis Tirino |
Publisher | : |
Total Pages | : 310 |
Release | : 2004 |
Genre | : Breakdown (Electricity) |
ISBN | : |
Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.
Author | : Damian D. Watkins |
Publisher | : |
Total Pages | : 46 |
Release | : 2000 |
Genre | : Gallium nitride |
ISBN | : |
Gallium Nitride is currently promoted as one of the most promising wide band-gap semiconductors for the development of optoelectronic devices that operate in the blue to ultraviolet spectrums. In order to fabricate optimal devices, materials properties need to be characterized. The feasibility of devices depends greatly on the carrier transport properties within the material. The most import property is electron/hole drift mobility, which is the relative ease of a carrier to move through the material. -- Abstract.
Author | : Mark A. Prelas |
Publisher | : Springer Science & Business Media |
Total Pages | : 523 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 9401101736 |
Proceedings of the NATO Advanced Research Workshop on `Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
Author | : M. R. Brozel |
Publisher | : Inst of Engineering & Technology |
Total Pages | : 981 |
Release | : 1996 |
Genre | : Technology & Engineering |
ISBN | : 9780852968857 |
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.