Solid State Device Research 91
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Author | : |
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Total Pages | : 456 |
Release | : 1995 |
Genre | : Aeronautics |
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Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author | : Marc J. Madou |
Publisher | : CRC Press |
Total Pages | : 3817 |
Release | : 2018-12-14 |
Genre | : Technology & Engineering |
ISBN | : 1351990616 |
Now in its third edition, Fundamentals of Microfabrication and Nanotechnology continues to provide the most complete MEMS coverage available. Thoroughly revised and updated the new edition of this perennial bestseller has been expanded to three volumes, reflecting the substantial growth of this field. It includes a wealth of theoretical and practical information on nanotechnology and NEMS and offers background and comprehensive information on materials, processes, and manufacturing options. The first volume offers a rigorous theoretical treatment of micro- and nanosciences, and includes sections on solid-state physics, quantum mechanics, crystallography, and fluidics. The second volume presents a very large set of manufacturing techniques for micro- and nanofabrication and covers different forms of lithography, material removal processes, and additive technologies. The third volume focuses on manufacturing techniques and applications of Bio-MEMS and Bio-NEMS. Illustrated in color throughout, this seminal work is a cogent instructional text, providing classroom and self-learners with worked-out examples and end-of-chapter problems. The author characterizes and defines major research areas and illustrates them with examples pulled from the most recent literature and from his own work.
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Publisher | : |
Total Pages | : 934 |
Release | : 1991 |
Genre | : Government publications |
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Author | : Arthur James Wells |
Publisher | : |
Total Pages | : 1252 |
Release | : 1992 |
Genre | : Bibliography, National |
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Publisher | : |
Total Pages | : 404 |
Release | : 1992 |
Genre | : Power resources |
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Author | : Vassil Palankovski |
Publisher | : Springer Science & Business Media |
Total Pages | : 309 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709105609 |
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author | : Vincenzo Peluso |
Publisher | : Springer Science & Business Media |
Total Pages | : 178 |
Release | : 2013-03-09 |
Genre | : Technology & Engineering |
ISBN | : 1475729782 |
Design of Low-Voltage Low-Power CMOS Delta-Sigma A/D Converters investigates the feasibility of designing Delta-Sigma Analog to Digital Converters for very low supply voltage (lower than 1.5V) and low power operation in standard CMOS processes. The chosen technique of implementation is the Switched Opamp Technique which provides Switched Capacitor operation at low supply voltage without the need to apply voltage multipliers or low VtMOST devices. A method of implementing the classic single loop and cascaded Delta-Sigma modulator topologies with half delay integrators is presented. Those topologies are studied in order to find the parameters that maximise the performance in terms of peak SNR. Based on a linear model, the performance degradations of higher order single loop and cascaded modulators, compared to a hypothetical ideal modulator, are quantified. An overview of low voltage Switched Capacitor design techniques, such as the use of voltage multipliers, low VtMOST devices and the Switched Opamp Technique, is given. An in-depth discussion of the present status of the Switched Opamp Technique covers the single-ended Original Switched Opamp Technique, the Modified Switched Opamp Technique, which allows lower supply voltage operation, and differential implementation including common mode control techniques. The restrictions imposed on the analog circuits by low supply voltage operation are investigated. Several low voltage circuit building blocks, some of which are new, are discussed. A new low voltage class AB OTA, especially suited for differential Switched Opamp applications, together with a common mode feedback amplifier and a comparator are presented and analyzed. As part of a systematic top-down design approach, the non-ideal charge transfer of the Switched Opamp integrator cell is modeled, based upon several models of the main opamp non-ideal characteristics. Behavioral simulations carried out with these models yield the required opamp specifications that ensure that the intended performance is met in an implementation. A power consumption analysis is performed. The influence of all design parameters, especially the low power supply voltage, is highlighted. Design guidelines towards low power operation are distilled. Two implementations are presented together with measurement results. The first one is a single-ended implementation of a Delta-Sigma ADC operating with 1.5V supply voltage and consuming 100 &mgr;W for a 74 dB dynamic range in a 3.4 kHz bandwidth. The second implementation is differential and operates with 900 mV. It achieves 77 dB dynamic range in 16 kHz bandwidth and consumes 40 &mgr;W. Design of Low-Voltage Low-Power CMOS Delta-Sigma A/D Converters is essential reading for analog design engineers and researchers.
Author | : Ross Knox Bassett |
Publisher | : JHU Press |
Total Pages | : 440 |
Release | : 2007-02-22 |
Genre | : Science |
ISBN | : 9780801886393 |
The metal-oxide-semiconductor (MOS) transistor is the fundamental element of digital electronics. The tens of millions of transistors in a typical home -- in personal computers, automobiles, appliances, and toys -- are almost all derive from MOS transistors. To the Digital Age examines for the first time the history of this remarkable device, which overthrew the previously dominant bipolar transistor and made digital electronics ubiquitous. Combining technological with corporate history, To the Digital Age examines the breakthroughs of individual innovators as well as the research and development power (and problems) of large companies such as IBM, Intel, and Fairchild. Bassett discusses how the MOS transistor was invented but spurned at Bell Labs, and then how, in the early 1960s, spurred on by the possibilities of integrated circuits, RCA, Fairchild, and IBM all launched substantial MOS R & D programs. The development of the MOS transistor involved an industry-wide effort, and Bassett emphasizes how communication among researchers from different firms played a critical role in advancing the new technology. Bassett sheds substantial new light on the development of the integrated circuit, Moore's Law, the success of Silicon Valley start-ups as compared to vertically integrated East Coast firms, the development of the microprocessor, and IBM's multi-billion-dollar losses in the early 1990s. To the Digital Age offers a captivating account of the intricate R & D process behind a technological device that transformed modern society.
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Total Pages | : 1644 |
Release | : 1991 |
Genre | : Government publications |
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Author | : W. Eccleston |
Publisher | : CRC Press |
Total Pages | : 368 |
Release | : 1991-09-01 |
Genre | : Technology & Engineering |
ISBN | : 9780750301688 |
Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.