Smart Power Ics
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| Author | : Bruno Murari |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 598 |
| Release | : 2002-06-13 |
| Genre | : Design |
| ISBN | : 9783540432388 |
This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.
| Author | : Muhammed Ayman Shibib |
| Publisher | : |
| Total Pages | : 562 |
| Release | : 1989 |
| Genre | : High voltages |
| ISBN | : |
| Author | : |
| Publisher | : |
| Total Pages | : 372 |
| Release | : 1994 |
| Genre | : Integrated circuits |
| ISBN | : |
| Author | : Sri Navaneethakrishnan Easwaran |
| Publisher | : Springer |
| Total Pages | : 154 |
| Release | : 2017-12-28 |
| Genre | : Technology & Engineering |
| ISBN | : 3319719823 |
This book provides a detailed description of fault tolerant design techniques for smart power drivers and their application in the design of automotive airbag ICs to ensure correct deployment. The book begins with an introduction to the nature of electrical loads in the car, then moves on to describe various current sensing circuits, featuring thermal simulations. It shows how simple design techniques can be applied to ensure appropriate functionality of the IC under any power up condition. It concludes by introducing diagnostic circuits and measurement results. This book is a useful reference for automotive IC designers and provides specifications and design guidelines not found in the current literature.
| Author | : Muhammad H. Rashid |
| Publisher | : Elsevier |
| Total Pages | : 1189 |
| Release | : 2010-07-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0080467652 |
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications.* 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission
| Author | : Mohamed Abouelatta |
| Publisher | : John Wiley & Sons |
| Total Pages | : 324 |
| Release | : 2022-10-18 |
| Genre | : Technology & Engineering |
| ISBN | : 1786308371 |
Smart power integration is at the crossroads of different fields of electronics such as high and low power, engine control and electrothermal studies of devices and circuits. These circuits are complex and are heavily influenced by substrate coupling, especially where 3D integration is concerned. This book provides an overview of smart power integration, including high voltage devices, dedicated and compatible processes, as well as isolation techniques. Two types of integration are highlighted: modular or hybrid integration, together with compatible devices such as the insulated gate bipolar transistor (IGBT); and monolithic integration, specifically through the paradigm of functional integration. Smart Power Integration outlines the main MOS devices for high voltage integrated circuits, and explores into the fields of codesign, coupling hardware and software design, including applications to motor control. Studies focusing on heat pipes for electronics cooling are also outlined.
| Author | : Yue Fu |
| Publisher | : CRC Press |
| Total Pages | : 366 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1351831712 |
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
| Author | : Pietro Buccella |
| Publisher | : Springer |
| Total Pages | : 195 |
| Release | : 2018-03-14 |
| Genre | : Technology & Engineering |
| ISBN | : 3319743821 |
This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
| Author | : Randy Frank |
| Publisher | : Artech House |
| Total Pages | : 390 |
| Release | : 2013 |
| Genre | : Technology & Engineering |
| ISBN | : 1608075079 |
Now in its third edition, Understanding Smart Sensors is the most complete, up-to-date, and authoritative summary of the latest applications and developments impacting smart sensors in a single volume. This thoroughly expanded and revised edition of an Artech bestseller contains a wealth of new material, including critical coverage of sensor fusion and energy harvesting, the latest details on wireless technology, the role and challenges involved with sensor apps and cloud sensing, greater emphasis on applications throughout the book, and dozens of figures and examples of current technologies from over 50 companies. This edition provides you with knowledge regarding a broad spectrum of possibilities for technology advancements based on current industry, university and national laboratories R & D efforts in smart sensors. Updated material also identifies the need for trusted sensing, the efforts of many organizations that impact smart sensing, and more. Utilizing the latest in smart sensor, microelectromechanical systems (MEMS) and microelectronic research and development, you get the technical and practical information you need keep your designs and products on the cutting edge. Plus, you see how network (wired and wireless) connectivity continues to impact smart sensor development. By combining information on micromachining and microelectronics, this is the first book that links these two important aspects of smart sensor technology so you don't have to keep multiple references on hand. This comprehensive resource also includes an extensive list of smart sensor acronyms and a glossary of key terms. With an effective blend of historical information and the latest content, the third edition of Understanding Smart Sensors provides a unique combination of foundational and future-changing information.
| Author | : Tobias Erlbacher |
| Publisher | : Springer |
| Total Pages | : 235 |
| Release | : 2014-10-08 |
| Genre | : Technology & Engineering |
| ISBN | : 3319005006 |
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
