Simulation of Semiconductor Processes and Devices 2001

Simulation of Semiconductor Processes and Devices 2001
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
Total Pages: 463
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3709162440

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Simulation of Semiconductor Processes and Devices 1998

Simulation of Semiconductor Processes and Devices 1998
Author: Kristin De Meyer
Publisher: Springer Science & Business Media
Total Pages: 423
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3709168279

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Compact Modeling

Compact Modeling
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
Total Pages: 531
Release: 2010-06-22
Genre: Technology & Engineering
ISBN: 9048186145

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Wafer Bonding

Wafer Bonding
Author: Marin Alexe
Publisher: Springer Science & Business Media
Total Pages: 510
Release: 2013-03-09
Genre: Science
ISBN: 3662108275

The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Semiconductor Power Devices

Semiconductor Power Devices
Author: Josef Lutz
Publisher: Springer Science & Business Media
Total Pages: 539
Release: 2011-01-15
Genre: Technology & Engineering
ISBN: 3642111254

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Scientific Computing in Electrical Engineering

Scientific Computing in Electrical Engineering
Author: Wilhelmus H. Schilders
Publisher: Springer Science & Business Media
Total Pages: 436
Release: 2004-08-11
Genre: Mathematics
ISBN: 9783540213727

This book presents the proceedings of the 4th International Workshop "Scientific Computing in Electrical Engineering", held in Eindhoven, The Netherlands, from June 23-28, 2002. This workshop followed three earlier workshops held in 1997 at the Darmstadt University of Technology, in 1998 at the Weierstrass Institute for Applied Analysis and Stochastics, and in 2000 at the University of Rostock. The main topics of SCEE-2002 were computational electrodynamics, circuit simulation and coupled problems. The objective of the workshop, which was mainly directed at mathematicians and electrical engineers, was to bring together scientists from universities and industry with the goal of intensive discussions about modelling and numerical simulation of electronic circuits and electromagnetic fields. A special feature was the "Industry Day", where distinguished speakers discussed the needs of industry in the field of computational electromagnetics and circuit simulation. The book contains papers of invited and contributed talks, as well as from poster presentations.

Quantum Transport in Submicron Devices

Quantum Transport in Submicron Devices
Author: Wim Magnus
Publisher: Springer Science & Business Media
Total Pages: 276
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3642561330

The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.

Silicon-on-Insulator Technology: Materials to VLSI

Silicon-on-Insulator Technology: Materials to VLSI
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
Total Pages: 375
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1441991069

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.