Simulation and Modeling of Emerging Devices

Simulation and Modeling of Emerging Devices
Author: Brinda Bhowmick
Publisher: Cambridge Scholars Publishing
Total Pages: 136
Release: 2023-05-10
Genre: Technology & Engineering
ISBN: 1527507041

This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.

Simulation and Modeling of Emerging Devices

Simulation and Modeling of Emerging Devices
Author: Brinda Bhowmick
Publisher:
Total Pages: 0
Release: 2023-07
Genre: Field-effect transistors
ISBN: 9781527507029

This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.

Introduction to Device Modeling and Circuit Simulation

Introduction to Device Modeling and Circuit Simulation
Author: Tor A. Fjeldly
Publisher: Wiley-Interscience
Total Pages: 440
Release: 1998
Genre: Computers
ISBN:

This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.

Nanoscale Transistors

Nanoscale Transistors
Author: Mark Lundstrom
Publisher: Springer Science & Business Media
Total Pages: 223
Release: 2006-06-18
Genre: Technology & Engineering
ISBN: 0387280030

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Modeling Emerging Semiconductor Devices for Circuit Simulation

Modeling Emerging Semiconductor Devices for Circuit Simulation
Author: Md Sakib Hasan
Publisher:
Total Pages: 0
Release: 2019
Genre: Electronic books
ISBN:

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore,Äôs Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon- on- insulator four gate transistor(G4FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator.

Simulation of Semiconductor Devices and Processes

Simulation of Semiconductor Devices and Processes
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
Total Pages: 515
Release: 2012-12-06
Genre: Computers
ISBN: 3709166195

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Optoelectronic Devices

Optoelectronic Devices
Author: Xun Li
Publisher: Cambridge University Press
Total Pages: 375
Release: 2009-06-11
Genre: Technology & Engineering
ISBN: 0521875102

Get hands-on experience of optoelectronic device design and simulation using numerical methods.

Simulation of Semiconductor Devices and Processes

Simulation of Semiconductor Devices and Processes
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
Total Pages: 525
Release: 2012-12-06
Genre: Computers
ISBN: 3709166578

The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Silicon And Beyond: Advanced Device Models And Circuit Simulators

Silicon And Beyond: Advanced Device Models And Circuit Simulators
Author: Tor A Fjeldly
Publisher: World Scientific
Total Pages: 188
Release: 2000-04-20
Genre: Technology & Engineering
ISBN: 9814493260

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Nonlinear Circuit Simulation and Modeling

Nonlinear Circuit Simulation and Modeling
Author: José Carlos Pedro
Publisher: Cambridge University Press
Total Pages: 361
Release: 2018-06-14
Genre: Technology & Engineering
ISBN: 1107140595

A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.