Meeting Abstracts

Meeting Abstracts
Author: Electrochemical Society. Meeting
Publisher:
Total Pages: 1172
Release: 1999
Genre: Electrochemistry
ISBN:

Silicon-on-Sapphire Technology: A Competitive Alternative for RF Systems

Silicon-on-Sapphire Technology: A Competitive Alternative for RF Systems
Author:
Publisher:
Total Pages: 6
Release: 2001
Genre:
ISBN:

The authors investigated the formation of high-performance, device-quality, thin-film silicon (30 to 50 nm) on sapphire (TFSOS) for application to millimeter-wave communication and sensors. The resulting TFSOS, obtained by Solid Phase Epitaxy (SPE), and the growth of strained silicon-germanium (SiGe) layers on these TFSOS demonstrated enhanced devices and integrated circuit performance not achieved previously. The authors fabricated 250-nm and 100-nm T-gated devices with noise figures as low as 0.9 dB at 2 GHz and 2.5 dB at 20 GHz, with G(sub a) of 21 dB and 7.5 dB, respectively. The 250-nm devices resulted in distributed wideband amplifiers (10-GHz bandwidth BW, world record) and tuned amplifiers (15-dB, 4-GHz BW). The 100-nm devices produced voltage-controlled oscillators (VCOs) (25.9-GHz), 30-GHz frequency dividers. They also obtained f(sub t) (f (sub max)) of 105 GHz (50 GHz) for n-channel and 49 GHz (116 GHz, world record) for p-MODFETs (strained Si(0.2)Ge(0.8) on a relaxed Si(0.7)Ge(0.3) hetero-structure). This paper details the investigation and provides cost comparisons with competing technologies.

Molecular Beam Epitaxy

Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 790
Release: 2018-06-27
Genre: Science
ISBN: 0128121378

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Convergence of More Moore, More than Moore and Beyond Moore

Convergence of More Moore, More than Moore and Beyond Moore
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 302
Release: 2021-02-16
Genre: Science
ISBN: 100006459X

The era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems has come. The research and development on Scalable and 3D integrated Diversified functions together with new computing architectures is in full swing. Besides data processing, data storage, new sensing modes and communication capabilities need the revision of process architecture to enable the Heterogeneous co integration of add-on devices with CMOS: the new defined functions and paradigms open the way to Augmented Nanosystems. The choices for future breakthroughs will request the study of new devices, circuits and computing architectures and to take new unexplored paths including as well new materials and integration schmes. This book reviews in two sections, including seven chapters, essential modules to build Diversified Nanosystems based on Nanoelectronics and finally how they pave the way to the definition of Nanofunctions for Augmented Nanosystems.

Technology and Applications of Amorphous Silicon

Technology and Applications of Amorphous Silicon
Author: Robert A. Street
Publisher: Springer Science & Business Media
Total Pages: 429
Release: 2013-06-29
Genre: Technology & Engineering
ISBN: 3662041413

This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.

Silicon-on-Insulator Technology: Materials to VLSI

Silicon-on-Insulator Technology: Materials to VLSI
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
Total Pages: 392
Release: 2004-02-29
Genre: Science
ISBN: 9781402077739

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

ESD in Silicon Integrated Circuits

ESD in Silicon Integrated Circuits
Author: E. Ajith Amerasekera
Publisher: John Wiley & Sons
Total Pages: 434
Release: 2002-05-22
Genre: Technology & Engineering
ISBN:

* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.