Silicon Carbide Semiconductor Device Fabrication And Characterization
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| Author | : National Aeronautics and Space Administration (NASA) |
| Publisher | : Createspace Independent Publishing Platform |
| Total Pages | : 34 |
| Release | : 2018-07-11 |
| Genre | : |
| ISBN | : 9781722766245 |
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
| Author | : |
| Publisher | : |
| Total Pages | : 35 |
| Release | : 1990 |
| Genre | : |
| ISBN | : |
A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.
| Author | : Tsunenobu Kimoto |
| Publisher | : John Wiley & Sons |
| Total Pages | : 565 |
| Release | : 2014-11-24 |
| Genre | : Technology & Engineering |
| ISBN | : 1118313526 |
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
| Author | : Tsunenobu Kimoto |
| Publisher | : John Wiley & Sons |
| Total Pages | : 565 |
| Release | : 2014-09-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1118313550 |
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
| Author | : Konstantinos Zekentes |
| Publisher | : Materials Research Forum LLC |
| Total Pages | : 250 |
| Release | : 2018-09-25 |
| Genre | : Technology & Engineering |
| ISBN | : 1945291842 |
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
| Author | : Kristofer J. Roe |
| Publisher | : |
| Total Pages | : 264 |
| Release | : 2001 |
| Genre | : Heterostructures |
| ISBN | : |
| Author | : Ira Ardoin |
| Publisher | : |
| Total Pages | : 118 |
| Release | : 2015 |
| Genre | : |
| ISBN | : |
The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.
| Author | : Kobchat Wongchotigul |
| Publisher | : |
| Total Pages | : 224 |
| Release | : 1992 |
| Genre | : |
| ISBN | : |
| Author | : Matthias Lang |
| Publisher | : |
| Total Pages | : |
| Release | : 2006 |
| Genre | : Germanium alloys |
| ISBN | : 9780542727542 |
The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.
| Author | : Kaushal D. Patel |
| Publisher | : |
| Total Pages | : 69 |
| Release | : 2017 |
| Genre | : |
| ISBN | : |
This research work is dealt with the fabrication of the optically triggered silicon carbide MESFET. The fabrication of the silicon carbide MESFET device has been chronologically described to study the device structure, process development, and material properties. In order to understand the fabrication process, the optimization of photo-resist processing, ion implanted doping process, chemical etching process, silicon oxide growth on SiC material, stoichiometry silicon oxide with SiC material and comparative study of silicon oxide growth for silicon and carbon faces of SiC, nickel and indium tin oxide materials deposition for ohmic and Schottky contacts have been studied to optimize the unit steps of fabrication process. A detailed study on ion implantation, high-temperature annealing, and electrical device isolation has been performed. Different failure analyses for wafer and device level have been conducted to monitor the device performance, fabrication processing and material properties. I-V characteristics of fabricated SiC MESFET device has been measured by the curve tracer and compared with other fabricated GaN MESFE device.
