Silicon Carbide 2006 Materials Processing And Devices
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Silicon Carbide 2006--materials, Processing and Devices
Author | : Michael Dudley |
Publisher | : |
Total Pages | : 496 |
Release | : 2006 |
Genre | : Science |
ISBN | : 9781558998674 |
Silicon Carbide
Author | : Zhe Chuan Feng |
Publisher | : |
Total Pages | : 389 |
Release | : 2004 |
Genre | : Silicon carbide |
ISBN | : 9780429209789 |
Silicon Carbide
Author | : Chuan Feng Zhe |
Publisher | : CRC Press |
Total Pages | : 416 |
Release | : 2003-10-30 |
Genre | : Technology & Engineering |
ISBN | : 9781135434410 |
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Silicon Carbide - Materials, Processing and Devices
Author | : Feng Zhao |
Publisher | : |
Total Pages | : 198 |
Release | : 2014 |
Genre | : Materials science |
ISBN | : 9781510805521 |
Silicon Carbide 2012
Author | : Stephen E. Saddow |
Publisher | : Cambridge University Press |
Total Pages | : 130 |
Release | : 2012 |
Genre | : Materials science |
ISBN | : 9781627482400 |
Silicon Carbide
Author | : Chuan Feng Zhe |
Publisher | : CRC Press |
Total Pages | : 412 |
Release | : 2003-10-30 |
Genre | : Technology & Engineering |
ISBN | : 1591690234 |
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742
Author | : Stephen E. Saddow |
Publisher | : |
Total Pages | : 432 |
Release | : 2003-03-25 |
Genre | : Technology & Engineering |
ISBN | : |
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Silicon Carbide
Author | : Moumita Mukherjee |
Publisher | : IntechOpen |
Total Pages | : 560 |
Release | : 2011-10-10 |
Genre | : Technology & Engineering |
ISBN | : 9789533079684 |
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.