SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
Author: David Harame
Publisher: The Electrochemical Society
Total Pages: 1136
Release: 2008
Genre: Electronic apparatus and appliances
ISBN: 1566776562

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
Author: D. Harame
Publisher: The Electrochemical Society
Total Pages: 1066
Release: 2010-10
Genre: Science
ISBN: 1566778255

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications
Author: Niccolò Rinaldi
Publisher: River Publishers
Total Pages: 378
Release: 2018-03-15
Genre: Technology & Engineering
ISBN: 8793519613

The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Metal Impurities in Silicon- and Germanium-Based Technologies

Metal Impurities in Silicon- and Germanium-Based Technologies
Author: Cor Claeys
Publisher: Springer
Total Pages: 464
Release: 2018-08-13
Genre: Technology & Engineering
ISBN: 3319939254

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Silicon-germanium Heterojunction Bipolar Transistors

Silicon-germanium Heterojunction Bipolar Transistors
Author: John D. Cressler
Publisher: Artech House
Total Pages: 592
Release: 2003
Genre: Science
ISBN: 9781580535991

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Properties of Silicon Germanium and SiGe:Carbon

Properties of Silicon Germanium and SiGe:Carbon
Author: Erich Kasper
Publisher: Inst of Engineering & Technology
Total Pages: 358
Release: 2000
Genre: Technology & Engineering
ISBN: 9780852967836

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Properties of Strained and Relaxed Silicon Germanium

Properties of Strained and Relaxed Silicon Germanium
Author: Erich Kasper
Publisher: Institution of Electrical Engineers
Total Pages: 0
Release: 1995
Genre: Germanium alloys
ISBN: 9780852968260

This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Author: Guilei Wang
Publisher: Springer Nature
Total Pages: 127
Release: 2019-09-20
Genre: Technology & Engineering
ISBN: 9811500460

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.