Si Rf Technology
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Author | : Ayan Karmakar |
Publisher | : Springer |
Total Pages | : 157 |
Release | : 2019-05-10 |
Genre | : Technology & Engineering |
ISBN | : 9811380511 |
This book discusses the recent research developments of various passive microwave circuits on silicon substrate and demonstrated operations catering for multiple frequency bands. It covers the design, modelling, process fabrication and characterization aspects with practical examples. The book will be of use to researchers and engineers working in the field of RF or microwave engineering, who can use the techniques and approaches effectively without having to refer to multiple sources.
Author | : John D. Cressler |
Publisher | : CRC Press |
Total Pages | : 1248 |
Release | : 2018-10-03 |
Genre | : Technology & Engineering |
ISBN | : 1420026585 |
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author | : Tatsuo Itoh |
Publisher | : John Wiley & Sons |
Total Pages | : 482 |
Release | : 2004-04-07 |
Genre | : Technology & Engineering |
ISBN | : 0471463922 |
A survey of microwave technology tailored for professionals in wireless communications RF Technologies for Low Power Wireless Communications updates recent developments in wireless communications from a hardware design standpoint and offers specialized coverage of microwave technology with a focus on the low power wireless units required in modern wireless systems. It explores results of recent research that focused on a holistic, integrated approach to the topics of materials, devices, circuits, modulation, and architectures rather than the more traditional approach of research into isolated topical areas. Twelve chapters deal with various fundamental research aspects of low power wireless electronics written by world-class experts in each field. The first chapter offers an overview of wireless architecture and performance, followed by detailed coverage of: Advanced GaAs-based HBT designs InP-based devices and circuits Si/SiGe HBT technology Noise in GaN devices Power amplifier architectures and nonlinearities Planar-oriented components MEMS and micromachined components Resonators, filters, and low-noise oscillators Antennas Transceiver front-end architectures With a clear focus and expert contributors, RF Technologies for Low Power Wireless Communications will be of interest to a wide range of electrical engineering disciplines working in wireless technologies.
Author | : Cam Nguyen |
Publisher | : John Wiley & Sons |
Total Pages | : 884 |
Release | : 2015-03-04 |
Genre | : Technology & Engineering |
ISBN | : 1118900472 |
Radio-Frequency Integrated-Circuit Engineering addresses the theory, analysis and design of passive and active RFIC's using Si-based CMOS and Bi-CMOS technologies, and other non-silicon based technologies. The materials covered are self-contained and presented in such detail that allows readers with only undergraduate electrical engineering knowledge in EM, RF, and circuits to understand and design RFICs. Organized into sixteen chapters, blending analog and microwave engineering, Radio-Frequency Integrated-Circuit Engineering emphasizes the microwave engineering approach for RFICs. * Provides essential knowledge in EM and microwave engineering, passive and active RFICs, RFIC analysis and design techniques, and RF systems vital for RFIC students and engineers * Blends analog and microwave engineering approaches for RFIC design at high frequencies * Includes problems at the end of each chapter
Author | : Ali M. Niknejad |
Publisher | : Springer Science & Business Media |
Total Pages | : 313 |
Release | : 2008-01-03 |
Genre | : Technology & Engineering |
ISBN | : 0387765611 |
This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.
Author | : John D. Cressler |
Publisher | : CRC Press |
Total Pages | : 258 |
Release | : 2018-10-03 |
Genre | : Technology & Engineering |
ISBN | : 1420066897 |
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author | : Uttam Singisetti |
Publisher | : World Scientific |
Total Pages | : 258 |
Release | : 2019-12-10 |
Genre | : Technology & Engineering |
ISBN | : 9811216495 |
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author | : Yaw Obeng |
Publisher | : The Electrochemical Society |
Total Pages | : 421 |
Release | : 2009-05 |
Genre | : Graphene |
ISBN | : 1566777135 |
The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.
Author | : I. J. Bahl |
Publisher | : Artech House |
Total Pages | : 509 |
Release | : 2003 |
Genre | : Technology & Engineering |
ISBN | : 1580533094 |
This practical book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The book offers professionals an in-depth understanding of the different types of RF and microwave circuit elements.
Author | : Jeffrey L. Hilbert |
Publisher | : CRC Press |
Total Pages | : 330 |
Release | : 2018-09-03 |
Genre | : Technology & Engineering |
ISBN | : 1498718922 |
An Industry Perspective on Key Tunable Technologies and Applications Tunable RF Components and Circuits: Applications in Mobile Handsets provides a technical introduction to the state of the art in tunable radio frequency (RF) components, circuits, and applications and discusses the foundational work that has been done to date. Leading practitioners in the field share their expertise on tunable devices in mobile handset applications. Through these practical viewpoints, readers discover how to use tunable RF techniques and devices to develop successful product designs. A substantial portion of the book focuses on antennas and antenna tuning, reflecting the dominance of the antenna tuning application in today’s commercial market for tunable RF. The book explains how RF-microelectromechanical systems (RF-MEMS), barium strontium titinate (BST), silicon-on-insulator (SOI) field effect transistors (FETs), and high-performance complementary metal oxide semiconductors (CMOS) are used as enabling technologies for tunable functions in current and next-generation radio architectures. The book also describes power amplifier envelope tracking, an emerging and important technique for improving efficiency; presents a network operator’s perspective on the evolution of the handset front end; and explores emerging approaches to production testing of wireless devices.