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| Author | : G.J. Davies |
| Publisher | : Springer |
| Total Pages | : 184 |
| Release | : 1994-03-31 |
| Genre | : Science |
| ISBN | : |
Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.
| Author | : Hans Lüth |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 497 |
| Release | : 2013-11-27 |
| Genre | : Technology & Engineering |
| ISBN | : 3662101599 |
"Surfaces and Interfaces of Solids" emphasizes both experimental and theoretical aspects of surface and interface physics. Beside the techniques of preparing well-defined solid surfaces and interfaces basic models for the description of structural, vibronic and electronic properties ofinterfaces are described, as well as fundamental aspects of adsorption and layer growth. Because of its importance for modern microelectronics special emphasis is placed on the electronic properties of semiconductorinterfaces and heterostructures. Experimental topics covering the basics of ultrahigh-vacuum technology, electron optics, surface spectroscopies and electrical interface characterization techniques are presented in the form of separate panels.
| Author | : R.S. Bauer |
| Publisher | : Elsevier |
| Total Pages | : 663 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0444600167 |
Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
| Author | : Jarek Dabrowski |
| Publisher | : World Scientific |
| Total Pages | : 580 |
| Release | : 2000 |
| Genre | : Science |
| ISBN | : 9789810232863 |
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.
| Author | : Leonard J. Brillson |
| Publisher | : John Wiley & Sons |
| Total Pages | : 589 |
| Release | : 2012-06-26 |
| Genre | : Technology & Engineering |
| ISBN | : 3527665722 |
An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/
| Author | : Harald Ibach |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 653 |
| Release | : 2006-11-18 |
| Genre | : Science |
| ISBN | : 3540347100 |
This graduate-level textbook covers the major developments in surface sciences of recent decades, from experimental tricks and basic techniques to the latest experimental methods and theoretical understanding. It is unique in its attempt to treat the physics of surfaces, thin films and interfaces, surface chemistry, thermodynamics, statistical physics and the physics of the solid/electrolyte interface in an integral manner, rather than in separate compartments. It is designed as a handbook for the researcher as well as a study-text for graduate students. Written explanations are supported by 350 graphs and illustrations.
| Author | : P.T. Landsberg |
| Publisher | : Elsevier |
| Total Pages | : 1219 |
| Release | : 2016-04-19 |
| Genre | : Science |
| ISBN | : 1483291103 |
Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.
| Author | : Paul H. Holloway |
| Publisher | : Cambridge University Press |
| Total Pages | : 937 |
| Release | : 2008-10-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0080946143 |
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
| Author | : Alexander V. Latyshev |
| Publisher | : Elsevier |
| Total Pages | : 553 |
| Release | : 2016-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 0128105135 |
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
| Author | : G P Srivastava |
| Publisher | : World Scientific |
| Total Pages | : 346 |
| Release | : 1999-11-22 |
| Genre | : Science |
| ISBN | : 9814496758 |
The state-of-the-art theoretical studies of ground state properties, electronic states and atomic vibrations for bulk semiconductors and their surfaces by the application of the pseudopotential method are discussed. Studies of bulk and surface phonon modes have been extended by the application of the phenomenological bond charge model. The coverage of the material, especially of the rapidly growing and technologically important topics of surface reconstruction and chemisorption, is up-to-date and beyond what is currently available in book form. Although theoretical in nature, the book provides a good deal of discussion of available experimental results. Each chapter provides an adequate list of references, relevant for both theoretical and experimental studies. The presentation is coherent and self-contained, and is aimed at the postgraduate and postdoctoral levels.
