Semiconductor Equations
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Author | : Peter A. Markowich |
Publisher | : Springer Science & Business Media |
Total Pages | : 261 |
Release | : 2012-12-06 |
Genre | : Mathematics |
ISBN | : 3709169615 |
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Author | : P.A. Markowich |
Publisher | : Springer Science & Business Media |
Total Pages | : 203 |
Release | : 2013-03-09 |
Genre | : Technology & Engineering |
ISBN | : 3709136784 |
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Author | : Ansgar Jüngel |
Publisher | : Birkhäuser |
Total Pages | : 301 |
Release | : 2011-04-27 |
Genre | : Mathematics |
ISBN | : 303488334X |
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author | : Ansgar Jüngel |
Publisher | : Springer Science & Business Media |
Total Pages | : 326 |
Release | : 2009-03-17 |
Genre | : Science |
ISBN | : 3540895256 |
This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.
Author | : P.A. Markowich |
Publisher | : Springer Science & Business Media |
Total Pages | : 210 |
Release | : 1985-12-12 |
Genre | : Technology & Engineering |
ISBN | : 9783211818923 |
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Author | : John E. Carroll |
Publisher | : Cambridge University Press |
Total Pages | : 194 |
Release | : 1990-03-30 |
Genre | : Science |
ISBN | : 9780521388665 |
This book presents a novel approach to the teaching of dynamic aspects of the operation of semiconductor and opto-electronic devices. Such dynamic aspects often determine the steady state conditions. Also, the dynamical operation of such devices is of increasing importance as modern methods of communicating data and information require electronic devices that switch electrical or optical signals at ever faster rates. The author discusses the rates at which electrons and holes can reach equilibrium, the rates at which transistors and diodes can switch, and the rates at which electrons and holes can interact with photons, and with protons. He also applies the rate equations in a unified way to models of light-emitting diodes, injection lasers and photodiodes. Finally, the author discusses more-advanced topics on the photon statistics of injection lasers, mode-locking and the application of rate equations and Maxwell's equations to opto-electronic devices.
Author | : J.S. Yuan |
Publisher | : Springer Science & Business Media |
Total Pages | : 352 |
Release | : 1998-05-31 |
Genre | : Technology & Engineering |
ISBN | : 9780306457241 |
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Author | : S. Selberherr |
Publisher | : Springer Science & Business Media |
Total Pages | : 308 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709187524 |
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Author | : Mackillo Kira |
Publisher | : Cambridge University Press |
Total Pages | : 658 |
Release | : 2011-11-17 |
Genre | : Science |
ISBN | : 1139502514 |
The emerging field of semiconductor quantum optics combines semiconductor physics and quantum optics, with the aim of developing quantum devices with unprecedented performance. In this book researchers and graduate students alike will reach a new level of understanding to begin conducting state-of-the-art investigations. The book combines theoretical methods from quantum optics and solid-state physics to give a consistent microscopic description of light-matter- and many-body-interaction effects in low-dimensional semiconductor nanostructures. It develops the systematic theory needed to treat semiconductor quantum-optical effects, such as strong light-matter coupling, light-matter entanglement, squeezing, as well as quantum-optical semiconductor spectroscopy. Detailed derivations of key equations help readers learn the techniques and nearly 300 exercises help test their understanding of the materials covered. The book is accompanied by a website hosted by the authors, containing further discussions on topical issues, latest trends and publications on the field. The link can be found at www.cambridge.org/9780521875097.
Author | : Siegfried Selberherr |
Publisher | : Springer |
Total Pages | : 532 |
Release | : 1993 |
Genre | : Science |
ISBN | : 9780387825045 |