Selected Constants Relative To Semi Conductors
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| Author | : P Aigrain |
| Publisher | : Elsevier |
| Total Pages | : 81 |
| Release | : 2013-10-02 |
| Genre | : Science |
| ISBN | : 1483151573 |
Selected Constants Relative to Semi-Conductors presents the physical constants of semiconductors in Table form. The values of the electronic properties of semiconductors presented in the Table are parameters intended for use in theoretical and phenomenological equations relative to the band theory for these materials. In addition to data specific to band structure, the Table also includes mobilities of electrons and holes and their variation with temperature. Data of a general physical character are also presented, since the researcher very often finds use for values of this type. The following quantities are given when available: symmetry group and crystal parameters, refractive index, dielectric constant, effective ionic charge, work function, photoemission work function, piezoresistance coefficient, elastic coefficients, phonon temperature, Debye temperature, magnetic susceptibility, coefficient of linear expansion, fusion temperature, sublimation temperature, specific heat at constant pressure, latent heat of fusion, latent heat of sublimation, thermal conductivity, disorder factor, and density.
| Author | : |
| Publisher | : |
| Total Pages | : 828 |
| Release | : 1959 |
| Genre | : Physical instruments |
| ISBN | : |
| Author | : Transistor Applications, Inc |
| Publisher | : |
| Total Pages | : 472 |
| Release | : 1960 |
| Genre | : Electric circuits |
| ISBN | : |
| Author | : A. G. Milnes |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 1014 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9401170215 |
For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
| Author | : V. I. Fistul |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 428 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 146848821X |
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
| Author | : L. Reggiani |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 288 |
| Release | : 2006-01-20 |
| Genre | : Technology & Engineering |
| ISBN | : 3540388494 |
Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
| Author | : B. L. Sharma |
| Publisher | : Elsevier |
| Total Pages | : 225 |
| Release | : 2015-12-04 |
| Genre | : Technology & Engineering |
| ISBN | : 1483280861 |
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
| Author | : T. F. Connolly |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 223 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 1468462016 |
And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...
| Author | : Ming-Fu Li |
| Publisher | : World Scientific |
| Total Pages | : 529 |
| Release | : 2011 |
| Genre | : Technology & Engineering |
| ISBN | : 1848164068 |
This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.
| Author | : Maurice Weiner |
| Publisher | : World Scientific |
| Total Pages | : 531 |
| Release | : 2001-03-02 |
| Genre | : Science |
| ISBN | : 9814492280 |
New Edition: Electromagnetic Analysis Using Transmission Line Variables (3rd Edition)Problems in electromagnetic propagation, especially those with complex geometries, have traditionally been solved using numerical methods, such as the method of finite differences. Unfortunately the mathematical methods suffer from a lack of physical appeal. The researcher or designer often loses sight of the physics underlying the problem, and changes in the mathematical formulation are often not identifiable with any physical change.This book employs a relatively new method for solving electromagnetic problems, one which makes use of a transmission line matrix (TLM). The propagation space is imagined to be filled with this matrix. The propagating fields and physical properties (for example, the presence of conductivity) are then mapped onto the matrix. Mathematically, the procedures are identical with the traditional numerical methods; however, the interpretation and physical appeal of the transmission line matrix are far superior. Any change in the matrix has an immediate physical significance. What is also very important is that the matrix becomes a launching pad for many improvements in the analysis (for example, the nature of coherent waves) using more modern notions of electromagnetic waves. Eventually, the purely mathematical techniques will probably give way to the transmission line matrix method.
