S Band Properties Of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures Oscillators
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Properties of Aluminium Gallium Arsenide
Author | : Sadao Adachi |
Publisher | : IET |
Total Pages | : 354 |
Release | : 1993 |
Genre | : Aluminium alloys |
ISBN | : 9780852965580 |
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
GaAs and Related Materials
Author | : Sadao Adachi |
Publisher | : World Scientific |
Total Pages | : 700 |
Release | : 1994 |
Genre | : Technology & Engineering |
ISBN | : 9789810219253 |
This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Properties of Gallium Arsenide
Author | : |
Publisher | : INSPEC |
Total Pages | : 370 |
Release | : 1986 |
Genre | : Technology & Engineering |
ISBN | : |
Properties of Lattice-matched and Strained Indium Gallium Arsenide
Author | : P. Bhattacharya |
Publisher | : Inst of Engineering & Technology |
Total Pages | : 340 |
Release | : 2000-09 |
Genre | : Science |
ISBN | : 9780863416620 |
"...provides an authoritative and convenient collection of pertinent data." - Optical and Quantum Electronics
Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
Author | : Günter Weimann |
Publisher | : CRC Press |
Total Pages | : 880 |
Release | : 1994-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9780750302951 |
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.