Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II: Volume 1432

Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II: Volume 1432
Author: Osamu Ueda
Publisher: Materials Research Society
Total Pages: 0
Release: 2012-08-27
Genre: Technology & Engineering
ISBN: 9781605114095

Symposium G, "Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II," was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California. Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to the materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding, packaging, etc. This symposium presented state-of-the-art results on reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin-film growth, wafer processing, and device fabrication processes.

Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials: Volume 1195

Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials: Volume 1195
Author: Osamu Ueda
Publisher: Cambridge University Press
Total Pages: 0
Release: 2010-08-20
Genre: Technology & Engineering
ISBN: 9781605111681

Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding, packaging, etc. This book focuses on the current status of reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin-film growth, wafer processing, and device fabrication processes. Topics include: laser reliability; degradation mechanisms; optical devices and reliability; electronic device reliability; wide-bandgap devices; compound semiconductors; characterization; characterization methods; strain effects; defects and growth; diffusion barriers; organic and other materials and novel structures.

Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices
Author: Milton Ohring
Publisher: Academic Press
Total Pages: 759
Release: 2014-10-14
Genre: Technology & Engineering
ISBN: 0080575528

Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites

Proceedings of the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis

Proceedings of the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
Author: F. Fantini
Publisher: Pergamon
Total Pages: 0
Release: 2002-10
Genre:
ISBN: 9780080441825

This Proceedings contains the papers presented at the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), held in Bellaria, Italy, 7-11 Oct 2002. The Proceedings are being published concurrently as a special issue of Microelectronics Reliability . Since its foundation in 1990, the annual ESREF symposium has been the premier European forum for the discussion of research in all aspects of specification, technology and manufacturing, test, control and analysis for microelectronic devices and circuits. Researchers at top institutions, in Europe and elsewhere, present high-quality experimental results at ESREF. The ESREF Proceedings have been published by Elsevier Science since 1996. This year's Proceedings follow the format and style of previous books in the series, and as always the list of topics addressed changes to keep up with developments in the field. Two new topics this year are optical devices and microelectromechanical systems (MEMS); both have attracted a high number of scientific contributions. The Proceedings contains nine invited papers and approximately 100 submitted contributions on the following topics: bull; Quality and reliability techniques for components and system bull; Failure mechanisms in silicon devices bull; Failure mechanisms in compound semiconductors devices bull; Non-volatile and programmable device reliability bull; Power devices reliability bull; Photonics reliability bull; Packaging and assembly reliability bull; Advanced failure analysis: defect detection and analysis bull; Electron and optical beam testing (EOBT) bull; Electrostatic discharge (ESD) bull; MEMS/MOEMS (Special Session) All papers are reviewed prior to publication. In this, the 40th year of publication of the journal Microelectronics Reliability, two of the invited papers are contributed by senior members of the Journal's Editorial Board, and are dedicated to that anniversary. This Proceedings will be indispensable for scientists and engineers working on the quality and reliability of microelectronic devices and circuits, and for anyone with a general interest in microelectronics research. For more information on Microelectronics Reliability , visit http://www.elsevier.com/locate/microrel http://www.elsevier.com/locate/microrel

Semiconductor Device Reliability

Semiconductor Device Reliability
Author: Aris Christou
Publisher: Springer
Total Pages: 575
Release: 1989-12-31
Genre: Technology & Engineering
ISBN: 0792305361

This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Proceedings of the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis

Proceedings of the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
Author: F. Fantini
Publisher: Pergamon Press
Total Pages:
Release: 2002
Genre: Technology & Engineering
ISBN: 9780080441818

This Proceedings contains the papers presented at the 13th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), held in Bellaria, Italy, 7-11 Oct 2002. The Proceedings are being published concurrently as a special issue of Microelectronics Reliability. Since its foundation in 1990, the annual ESREF symposium has been the premier European forum for the discussion of research in all aspects of specification, technology and manufacturing, test, control and analysis for microelectronic devices and circuits. Researchers at top institutions, in Europe and elsewhere, present high-quality experimental results at ESREF. The ESREF Proceedings have been published by Elsevier Science since 1996. This year's Proceedings follow the format and style of previous books in the series, and as always the list of topics addressed changes to keep up with developments in the field. Two new topics this year are optical devices and microelectromechanical systems (MEMS); both have attracted a high number of scientific contributions. The Proceedings contains nine invited papers and approximately 100 submitted contributions on the following topics: • Quality and reliability techniques for components and system • Failure mechanisms in silicon devices • Failure mechanisms in compound semiconductors devices • Non-volatile and programmable device reliability • Power devices reliability • Photonics reliability • Packaging and assembly reliability • Advanced failure analysis: defect detection and analysis • Electron and optical beam testing (EOBT) • Electrostatic discharge (ESD) • MEMS/MOEMS (Special Session) All papers are reviewed prior to publication. In this, the 40th year of publication of the journal Microelectronics Reliability, two of the invited papers are contributed by senior members of the Journal's Editorial Board, and are dedicated to that anniversary. This Proceedings will be indispensable for scientists and engineers working on the quality and reliability of microelectronic devices and circuits, and for anyone with a general interest in microelectronics research. For more information on Microelectronics Reliability, visit http://www.elsevier.com/locate/microrelhttp://www.elsevier.com/locate/microrel

Index to IEEE Publications

Index to IEEE Publications
Author: Institute of Electrical and Electronics Engineers
Publisher:
Total Pages: 624
Release: 1989
Genre: Electric engineering
ISBN:

Issues for 1973- cover the entire IEEE technical literature.