Recombination Lifetime Measurements in Silicon
Author | : Dinesh C. Gupta |
Publisher | : ASTM International |
Total Pages | : 389 |
Release | : 1998 |
Genre | : Electronic measurements |
ISBN | : 0803124899 |
Download Recombination Lifetime Measurements In Silicon full books in PDF, epub, and Kindle. Read online free Recombination Lifetime Measurements In Silicon ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Dinesh C. Gupta |
Publisher | : ASTM International |
Total Pages | : 389 |
Release | : 1998 |
Genre | : Electronic measurements |
ISBN | : 0803124899 |
Author | : Stefan Rein |
Publisher | : Springer Science & Business Media |
Total Pages | : 513 |
Release | : 2005-11-25 |
Genre | : Science |
ISBN | : 3540279229 |
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Author | : J. S. Blakemore |
Publisher | : Courier Corporation |
Total Pages | : 404 |
Release | : 2002-01-01 |
Genre | : Science |
ISBN | : 0486495027 |
In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination. 1962 edition.
Author | : W.R. Fahrner |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 204 |
Release | : 2006-08-15 |
Genre | : Technology & Engineering |
ISBN | : 3038131024 |
The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made to reduce the production costs of “conventional” solar cells (manufactured from monocrystalline silicon using diffusion methods) by instead using cheaper grades of silicon, and simpler pn-junction fabrication. That is the ‘hero’ of this book; the heterojunction solar cell.
Author | : Lorenzo Pavesi |
Publisher | : John Wiley & Sons |
Total Pages | : 648 |
Release | : 2010-02-02 |
Genre | : Technology & Engineering |
ISBN | : 9783527629961 |
This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.
Author | : Richard L. Mattis |
Publisher | : |
Total Pages | : 56 |
Release | : 1972 |
Genre | : Photoconductivity |
ISBN | : |
Author | : Klaus Graff |
Publisher | : Springer Science & Business Media |
Total Pages | : 228 |
Release | : 2013-03-08 |
Genre | : Technology & Engineering |
ISBN | : 3642975933 |
A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Author | : Dieter K. Schroder |
Publisher | : John Wiley & Sons |
Total Pages | : 800 |
Release | : 2015-06-29 |
Genre | : Technology & Engineering |
ISBN | : 0471739065 |
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author | : Stefan Rein |
Publisher | : Springer Science & Business Media |
Total Pages | : 528 |
Release | : 2005-06-23 |
Genre | : Science |
ISBN | : 9783540253037 |
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Author | : W. Murray Bullis |
Publisher | : |
Total Pages | : 68 |
Release | : 1968 |
Genre | : Semiconductors |
ISBN | : |
About 300 papers concerned with the measurement and interpretation of carrier lifetime in semiconductors are listed together with key words and a brief comment for each. Eight types of entries are included: Description of Methods, Analysis of Results, Standard Methods, Experimental Results, Theroetical Models, Auxiliary Procedures and Data, Reviews, and Books. Emphasis is placed on methods of carrying out measurements of carrier lifetime. Hence complete coverage was attempted and nearly two thirds of the entries appear in the first three categories. A large fraction of the papers listed describe the photoconductivity or photoconductive decay methods. The other most popular methods are based on diode characteristics or the photomagnetoelectric effect. In all, 35 methods for measuring carrier lifetime are represented by entries. In addition, representative papers which describe various models for recombination are included together with a number of papers which discuss the influence of surface recombination and trapping phenomena. Auxiliary procedures such as surface preparation, formation of ohmic contacts, control of temperature, and the like are described in some of the entries. Two indexes, a Key Word Index and an Author Index, are provided together with a classification of the various methods for measuring carrier lifetime. (Author).