Reactive Sputter Deposition Of Vanadium Nickel And Molybdenum Oxide Thin Films For Use In Uncooled Infrared Imaging
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| Author | : Yao Jin |
| Publisher | : |
| Total Pages | : |
| Release | : 2014 |
| Genre | : |
| ISBN | : |
A vanadium oxide (VO x) thin film is the most common imaging layer used in commercial uncooled focal plane arrays for infrared cameras. These VOx thin films have an x value ranging from 1.3 to 2 and have low resistivity (0.1 to 10 [omega] cm), high temperature coefficient of resistance (TCR) (-2 to -3 %/K), and low 1/f noise. Reactive ion beam sputtering is typically used to deposit these VOx thin films for commercial thermal imaging cameras. However, the reactive ion beam deposition system for the VOx is reported to have less than desirable throughput and a narrow process window. In this work, the potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx thin films for microbolometer applications was investigated. VOx thin films with resistivity from 10-4 to 105 [omega] cm with a TCR from 0 to -4.3 %/K were deposited by reactive sputtering from a metallic vanadium target in argon/oxygen mixtures with substrate bias. Magnetron sputtered VOx shows bolometric properties comparable to those of commercial-grade IBD prepared VOx. Important limitations for manufacturing implementation of reactive magnetron sputtering such as hysteresis oxidation and non-uniform oxidation of the vanadium target surface were evaluated. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VOx in the resistivity range of 0.1--10 [omega] cm with good uniformity and process control, it was found that a lower processing pressure, larger target-to-substrate distance, and an oxygen inlet near the substrate are useful. Other processing methods employing magnetron sputtering were investigated such as co-sputtering of V and V2O5 target, sputtering from a VC target, a V2O5 target, and a V2Ox target but initial investigation of these methods did not yield a superior process to the simple sputtering of a pure metallic vanadium target. Another technique, biased target ion beam deposition (BTIBD), was investigated for deposition VOx thin films with potential alloy additions. In this BTIBD system, ions with energy lower than 25 eV were generated remotely and vanadium targets are negatively biased independently for sputtering. High TCR (
| Author | : Diederik Depla |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 584 |
| Release | : 2008-06-24 |
| Genre | : Technology & Engineering |
| ISBN | : 3540766642 |
In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.
| Author | : Qi Wang |
| Publisher | : |
| Total Pages | : |
| Release | : 1996 |
| Genre | : |
| ISBN | : |
| Author | : Kiyotaka Wasa |
| Publisher | : William Andrew |
| Total Pages | : 657 |
| Release | : 2012-12-31 |
| Genre | : Technology & Engineering |
| ISBN | : 1437734847 |
This thoroughly updated new edition includes an entirely new team of contributing authors with backgrounds specializing in the various new applications of sputtering technology. It forms a bridge between fundamental theory and practical application, giving an insight into innovative new materials, devices and systems. Organized into three parts for ease of use, this Handbook introduces the fundamentals of thin films and sputtering deposition, explores the theory and practices of this field, and also covers new technology such as nano-functional materials and MEMS. Wide varieties of functional thin film materials and processing are described, and experimental data is provided with detailed examples and theoretical descriptions. A strong applications focus, covering current and emerging technologies, including nano-materials and MEMS (microelectrolmechanical systems) for energy, environments, communications, and/or bio-medical field. New chapters on computer simulation of sputtering and MEMS completes the update and insures that the new edition includes the most current and forward-looking coverage available All applications discussed are supported by theoretical discussions, offering readers both the "how" and the "why" of each technique 40% revision: the new edition includes an entirely new team of contributing authors with backgrounds specializing in the various new applications that are covered in the book and providing the most up-to-date coverage available anywhere
| Author | : Yimin Wang |
| Publisher | : |
| Total Pages | : |
| Release | : 2002 |
| Genre | : |
| ISBN | : |
Molybdenum nitride thin film was deposited on silicon wafer by the reactive sputter deposition. Single phase?6Mo 2 N thin film was obtained with N 2 /(Ar+N 2) flow ratios in sputtering gas varying from 10% to 30% whereas an amorphous structure was obtained at N2/(Ar+N2) flow ratios of 50%. The deposition rate of the molybdenum nitride thin film varies significantly as nitrogen partial pressure in sputtering gas increases. A decrease in peak intensity along with peak shift and broadening was observed in X-ray diffraction spectra as the nitrogen partial pressure sputtering gas increased. The XPS analysis of the as-deposited thin films shows that the Mo 3d 3/2, Mo 3d 5/2 and Mo 2p 3/2 peak gradually shift to the higher binding energy direction as nitrogen partial pressure is increasing. The intensity of N 1s peak also increase with increasing nitrogen partial pressure. Although the XRD examination shows no evidence of long range order of the phase structure for the amorphous thin film sputtered at 50% N 2 /(Ar+N 2) flow ratio, the existence of Mo6N bond in the film was confirmed by XPS examination. The nitrogen partial pressure in the sputtering gas was found to have significant influence on the surface morphologies and cross section structures of the thin film. Thermal annealing of the amorphous thin film in a nitrogen atmosphere revealed that the film could survive 700ʻC,5min thermal annealing without obvious crystallization but failed after 800ʻC,5min thermal annealing, in which the crystalline?-Mo 2 N and h6MoSi 2 phases were observed simultaneously.
| Author | : Jaydeep Sarkar |
| Publisher | : William Andrew |
| Total Pages | : 614 |
| Release | : 2010-12-13 |
| Genre | : Technology & Engineering |
| ISBN | : 0815519877 |
An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues. The content of the book has been divided into two sections: (a) the first section (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the second section (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications. In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful. . Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirements Practical information on technology trends, role of sputtering and major OEMs Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. Practical case-studies on target performance and troubleshooting Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry
| Author | : Mengyang Zou |
| Publisher | : |
| Total Pages | : 68 |
| Release | : 2015 |
| Genre | : Bolometer |
| ISBN | : |
Microbolometer IR imagers consist of an array of thermally sensitive pixels that change resistance as infrared radiation is focused onto the array. Commonly used thermoresisitive materials are amorphous silicon (a-Si) and vanadium oxide (VOx). Despite their use in image sensors, these films are extremely difficult to produce with widely varying process conditions being reported in the literature. Therefore, the goal of this work was to examine the process windows of some of these methods, including novel approaches such as oxygen ion assisted deposition (IAD), aluminum-induced crystallization and glancing angle deposition. Among the thermoresistive materials, vanadium oxide has been widely used in microbolometers due to their excellent thermoresistive properties, relatively fast thermal time constants and high temperature coefficient of resistance (TCR). In our work, we examined different physical vapor deposition methods including: RF reactive sputtering of metallic vanadium to produce vanadium oxide, thermal evaporation of vanadium films and subsequent oxidation, and Oxygen Ion-Assisted Deposition (IAD) of e-beam evaporated vanadium. In addition to VOx, amorphous silicon is also desirable because it can be easily integrated into the CMOS fabrication processes more than VOx. The hydrogenated amorphous silicon produced by PECVD has a high TCR and a relatively high optical absorption coefficient. In addition to PECVD, we used a glancing angle deposition and also examined a novel approach to create polycrystalline silicon from aluminum-induced crystallization.
| Author | : Steven D. Hansen |
| Publisher | : |
| Total Pages | : 62 |
| Release | : 1984 |
| Genre | : Sputtering (Physics) |
| ISBN | : |
| Author | : Hernan M. R. |
| Publisher | : |
| Total Pages | : |
| Release | : 2017 |
| Genre | : Science |
| ISBN | : |
This chapter describes a new deposition method proposed to achieve Vanadium Oxide VOx/V2O5 thin films with high temperature coefficient of resistance (TCR), intended to be used as functional material in IR microsensors (bolometers). The main aim of the work is to attain a deposition method compatible with the lift-off microstructuring technique in order to avoid the use of a reactive-ion etching (RIE) process step to selectively remove the VOx/V2O5 deposited layer in the course of the definition of the bolometer geometry, preventing the harmful effects linked to the spatial variability and the lack of selectivity of the RIE process. The proposed technique makes use of a two-stage process to produce the well-controlled VOx or V2O5 thin films by applying a suitable thermal annealing to a previously deposited layer, which was obtained before at room temperature by RF magnetron sputtering and patterned by lift-off. A set of measurements has been carried out with thin films attained in order to check the quality and properties of the materials achieved with this method. The results reached with V2O5 pure phase films are consistent with a charge transport model based on the small polarons hopping derived from Mott's model under the Schnakenberg form.
| Author | : Bryan Douglas Gauntt |
| Publisher | : |
| Total Pages | : 170 |
| Release | : 2011 |
| Genre | : |
| ISBN | : |
