Rapid Thermal Processing For Future Semiconductor Devices
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Author | : H. Fukuda |
Publisher | : Elsevier |
Total Pages | : 161 |
Release | : 2003-04-02 |
Genre | : Science |
ISBN | : 0080540260 |
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
Author | : Wielfried Lerch |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 427 |
Release | : 2008-03-24 |
Genre | : Technology & Engineering |
ISBN | : 3038131733 |
Special topic volume with invited papers only
Author | : |
Publisher | : Newnes |
Total Pages | : 3572 |
Release | : 2011-01-28 |
Genre | : Science |
ISBN | : 0080932282 |
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author | : Victor E. Borisenko |
Publisher | : Springer Science & Business Media |
Total Pages | : 374 |
Release | : 2013-11-22 |
Genre | : Technology & Engineering |
ISBN | : 1489918043 |
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author | : Hari Singh Nalwa |
Publisher | : Elsevier |
Total Pages | : 562 |
Release | : 1999-09-07 |
Genre | : Science |
ISBN | : 0080533531 |
Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.
Author | : Oleg Velichko |
Publisher | : World Scientific |
Total Pages | : 404 |
Release | : 2019-11-05 |
Genre | : Technology & Engineering |
ISBN | : 1786347172 |
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Author | : Akarsh Verma |
Publisher | : Springer Nature |
Total Pages | : 419 |
Release | : 2023-07-12 |
Genre | : Technology & Engineering |
ISBN | : 9819935490 |
This book comprehensively reviews assorted types of coatings, their applications, and various strategies employed by several scientists and researchers to fabricate them. Exclusively, the recent progress in computational strategies that are helpful to optimize the best suitable coating formulation before one goes for the real-time fabrication has been discussed in detail. And this book is also intended to shed light on the computational modeling techniques that are used in the characterization of various coating materials. It covers mechanisms, salient features, formulations, important aspects, and case studies of coatings utilized for various applications. The latest research in this area as well as possible avenues of future research is also highlighted to encourage the researchers.
Author | : Sammy Tin |
Publisher | : Springer Nature |
Total Pages | : 1098 |
Release | : 2020-08-28 |
Genre | : Technology & Engineering |
ISBN | : 3030518345 |
The 14th International Symposium on Superalloys (Superalloys 2020) highlights technologies for lifecycle improvement of superalloys. In addition to the traditional focus areas of alloy development, processing, mechanical behavior, coatings, and environmental effects, this volume includes contributions from academia, supply chain, and product-user members of the superalloy community that highlight technologies that contribute to improving manufacturability, affordability, life prediction, and performance of superalloys.
Author | : F. Roozeboom |
Publisher | : Springer Science & Business Media |
Total Pages | : 568 |
Release | : 2013-03-09 |
Genre | : Science |
ISBN | : 9401587116 |
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Author | : Cherie R. Kagan |
Publisher | : CRC Press |
Total Pages | : 543 |
Release | : 2003-02-25 |
Genre | : Technology & Engineering |
ISBN | : 0203911776 |
This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays. It evaluates the preparation of polycrystallin