Radiation Effects on Metal-oxide-silicon Field-effect Transistors

Radiation Effects on Metal-oxide-silicon Field-effect Transistors
Author: Phillip Roger Olson
Publisher:
Total Pages: 41
Release: 1968
Genre:
ISBN:

Radiation effects on Metal-Oxide-Silicon Field Effect Transistors are studied. A brief history of development, theory of operation and survey of previous radiation effect work is given. Previous work points to a charge buildup in the oxide layer and a possible increase in fast surface state density as being the causes of semi-permanent degradation. Experimental work was done using a FI 100 p-channel MOSFET to determine the feasibility of studying radiation effects using available equipment at the Naval Postgraduate School. It was found that the study of charge buildup is feasible. Data obtained agreed qualitatively with previous results. Thermal annealing of a device after irradiation reduced the semi-permanent degradation significantly as is seen in previous work. Transient photocurrents produced in the oxide layer were examined and problems were revealed which must be solved before such work will become meaningful. Package and charge scattering effects may be masking the real effects. Suggestions for future work are included. (Author).

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors
Author: Stewart Share
Publisher:
Total Pages: 24
Release: 1976
Genre:
ISBN:

An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000,000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source-drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation. (Author).

Electron Spin Resonance and Radiation Effects in MOS Devices

Electron Spin Resonance and Radiation Effects in MOS Devices
Author:
Publisher:
Total Pages: 90
Release: 1990
Genre:
ISBN:

The basic mechanisms were explored of radiation damage in metal/ oxide/silicon (MOS) field effect transistors (MOSFET's) with a combination of electron spin resonance (ESR) and electrical measurements. The major focus has been develop a new and much more sensitive ESR technique called spin dependent recombination (SDR) to study radiation damage in MOSFET's. Keywords: Metal oxide semiconductors; Field effect transistors; Electron spin resonance; Radiation effects.

Hot-Carrier Effects on Total Dose Irradiated 65 Nm N-Type Metal-Oxide-Semiconductor Field-Effect Transistors*Supported by the National Natural Science Foundation of China Under Grant Nos 11475255, U1532261 and 11505282

Hot-Carrier Effects on Total Dose Irradiated 65 Nm N-Type Metal-Oxide-Semiconductor Field-Effect Transistors*Supported by the National Natural Science Foundation of China Under Grant Nos 11475255, U1532261 and 11505282
Author:
Publisher:
Total Pages:
Release: 2016
Genre:
ISBN:

Abstract : The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.

Ionizing Radiation Effects in Electronics

Ionizing Radiation Effects in Electronics
Author: Marta Bagatin
Publisher: CRC Press
Total Pages: 394
Release: 2018-09-03
Genre: Technology & Engineering
ISBN: 1498722636

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

Surface Effects of Radiation on Microelectronic Devices: Part Ii

Surface Effects of Radiation on Microelectronic Devices: Part Ii
Author:
Publisher:
Total Pages: 80
Release: 1966
Genre:
ISBN:

Both intermediate and semipermanent effects of ionizing radiation were studied for three types of metal-oxide-silicon field effect transistors (MOSFET's): the n-channel 2N4038 (enhancement), the p-channel 2N3638 (enhancement), and an n-channel silicon-on-sapphire thin film (depletion) device. Intermediate effects were studied by the observation of conductivity changes as a function of successive irradiations at various bias points. Both conductivity changes and changes in transconductance were observed in the study of semipermanent effects resulting from each irradiation. (Author).

Ionizing Radiation Effects in MOS Devices and Circuits

Ionizing Radiation Effects in MOS Devices and Circuits
Author: T. P. Ma
Publisher: John Wiley & Sons
Total Pages: 616
Release: 1989-04-18
Genre: Technology & Engineering
ISBN: 9780471848936

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

NASA Scientific and Technical Reports

NASA Scientific and Technical Reports
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher:
Total Pages: 2300
Release: 1967
Genre: Aeronautics
ISBN: