Properties And Applications Fo Transistors
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| Author | : J. P. Vasseur |
| Publisher | : Elsevier |
| Total Pages | : 473 |
| Release | : 2016-06-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1483138887 |
Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.
| Author | : Benjamin M. Fitzgerald |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2010 |
| Genre | : Semiconductors |
| ISBN | : 9781616689087 |
Transistors play a central role in many electronic circuits, where they usually function as either a switch or an amplifier. This book reviews research in the field of transistors including a new class of transistors whose channels are made from semiconducting carbon nanomaterials; the evolution of these designs and the highlights of the work that has driven their development. Also discussed, herein, are the electronic properties and self-consistent simulations of carbon nanotubes in transistor technology; the future developments in the nanowire field-effect transistor research area; the implementation of chaotic oscillators by using transistors designed with CMOS integrated circuit technology and others.
| Author | : Alex Lidow |
| Publisher | : John Wiley & Sons |
| Total Pages | : 389 |
| Release | : 2019-09-30 |
| Genre | : Science |
| ISBN | : 1119594146 |
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
| Author | : Brajesh Kumar Kaushik |
| Publisher | : CRC Press |
| Total Pages | : 270 |
| Release | : 2016-09-15 |
| Genre | : Technology & Engineering |
| ISBN | : 1315352591 |
Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well.
| Author | : Sanghyun Lee |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 102 |
| Release | : 2018-10-03 |
| Genre | : Science |
| ISBN | : 1789840317 |
Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.
| Author | : J.-P. Colinge |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 350 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 038771751X |
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
| Author | : S W Amos |
| Publisher | : Elsevier |
| Total Pages | : 401 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1483293904 |
For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand and as practical solutions to design problems, especially where appreciable power output or high voltage is required. New circuit techniques covered for the first time in this edition include current-dumping amplifiers, bridge output stages, dielectric resonator oscillators, crowbar protection circuits, thyristor field timebases, low-noise blocks and SHF amplifiers in satellite receivers, video clamps, picture enhancement circuits, motor drive circuits in video recorders and camcorders, and UHF modulators. The plan of the book remains the same: semiconductor physics is introduced, followed by details of the design of transistors, amplifiers, receivers, oscillators and generators. Appendices provide information on transistor manufacture and parameters, and a new appendix on transistor letter symbols has been included.
| Author | : Pouya Valizadeh |
| Publisher | : John Wiley & Sons |
| Total Pages | : 471 |
| Release | : 2016-02-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1119155495 |
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
| Author | : J. A. Walston |
| Publisher | : |
| Total Pages | : |
| Release | : 1999 |
| Genre | : |
| ISBN | : |
| Author | : Das, Susanta |
| Publisher | : IGI Global |
| Total Pages | : 508 |
| Release | : 2024-11-01 |
| Genre | : Science |
| ISBN | : |
Metal nanoparticles, ranging from 1 nanometer (nm) to 100 nm, possess unique physical, chemical, and biological properties, driving significant scientific and technological advancements. Traditional methods for producing these nanoparticles, such as physical and chemical synthesis, are often costly, time-consuming, and hazardous to health. In response, green synthesis has gained popularity due to its non-toxic, eco-friendly, and cost-effective approach. This method uses plant materials and microorganisms to produce stable, biocompatible nanoparticles. As a result, green synthesis is becoming a promising alternative for the development of metal nanoparticles. Synthesizing and Characterizing Plant-Mediated Biocompatible Metal Nanoparticles describes the domain of synthesizing and characterizing plant-mediated biocompatible metal nanoparticles, exploring numerous applications from fostering a sustainable environment to diverse nanotechnological applications such as drug discovery, cancer treatment, and beyond. It further addresses a broad spectrum of societal and technological challenges and related issues, thereby assisting stakeholders in making informed decisions within this rapidly evolving field in our dynamic and contemporary scientific society. Covering topics such as antibiotics, nano-fertilizer, and wastewater treatment, this book is an excellent resource for policymakers, industry professionals, academicians, researchers, graduate and postgraduate students, and more.
