Proceedings Of The International Symposium On Power Semiconductor Devices And Ics
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Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference
Author | : Paul Maki |
Publisher | : World Scientific |
Total Pages | : 205 |
Release | : 2007-06-27 |
Genre | : Technology & Engineering |
ISBN | : 9814474746 |
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
Fundamentals of Power Semiconductor Devices
Author | : B. Jayant Baliga |
Publisher | : Springer Science & Business Media |
Total Pages | : 1104 |
Release | : 2008-09-05 |
Genre | : Technology & Engineering |
ISBN | : 9780387473130 |
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Integrated Circuit Design for Radiation Environments
Author | : Stephen J. Gaul |
Publisher | : John Wiley & Sons |
Total Pages | : 404 |
Release | : 2019-12-31 |
Genre | : Technology & Engineering |
ISBN | : 1119966345 |
A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.
The Electronic Packaging Handbook
Author | : Glenn R. Blackwell |
Publisher | : CRC Press |
Total Pages | : 937 |
Release | : 2017-12-19 |
Genre | : Technology & Engineering |
ISBN | : 1351835548 |
The packaging of electronic devices and systems represents a significant challenge for product designers and managers. Performance, efficiency, cost considerations, dealing with the newer IC packaging technologies, and EMI/RFI issues all come into play. Thermal considerations at both the device and the systems level are also necessary. The Electronic Packaging Handbook, a new volume in the Electrical Engineering Handbook Series, provides essential factual information on the design, manufacturing, and testing of electronic devices and systems. Co-published with the IEEE, this is an ideal resource for engineers and technicians involved in any aspect of design, production, testing or packaging of electronic products, regardless of whether they are commercial or industrial in nature. Topics addressed include design automation, new IC packaging technologies, materials, testing, and safety. Electronics packaging continues to include expanding and evolving topics and technologies, as the demand for smaller, faster, and lighter products continues without signs of abatement. These demands mean that individuals in each of the specialty areas involved in electronics packaging-such as electronic, mechanical, and thermal designers, and manufacturing and test engineers-are all interdependent on each others knowledge. The Electronic Packaging Handbook elucidates these specialty areas and helps individuals broaden their knowledge base in this ever-growing field.
Springer Handbook of Semiconductor Devices
Author | : Massimo Rudan |
Publisher | : Springer Nature |
Total Pages | : 1680 |
Release | : 2022-11-10 |
Genre | : Technology & Engineering |
ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Highly Integrated Gate Drivers for Si and GaN Power Transistors
Author | : Achim Seidel |
Publisher | : Springer Nature |
Total Pages | : 137 |
Release | : 2021-03-31 |
Genre | : Technology & Engineering |
ISBN | : 3030689409 |
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Latchup
Author | : Steven H. Voldman |
Publisher | : John Wiley & Sons |
Total Pages | : 472 |
Release | : 2008-04-15 |
Genre | : Technology & Engineering |
ISBN | : 9780470516164 |
Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.
Handbook of GaN Semiconductor Materials and Devices
Author | : Wengang (Wayne) Bi |
Publisher | : CRC Press |
Total Pages | : 709 |
Release | : 2017-10-20 |
Genre | : Science |
ISBN | : 1498747140 |
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Silicon Carbide, Volume 2
Author | : Peter Friedrichs |
Publisher | : John Wiley & Sons |
Total Pages | : 520 |
Release | : 2011-04-08 |
Genre | : Science |
ISBN | : 9783527629084 |
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.