Proceedings of the 16th International Conference on Defects in Semiconductors
Author | : Gordon Davies |
Publisher | : |
Total Pages | : 540 |
Release | : 1992 |
Genre | : Semiconductors |
ISBN | : |
Download Proceedings Of The 16th International Conference On Defects In Semiconductors full books in PDF, epub, and Kindle. Read online free Proceedings Of The 16th International Conference On Defects In Semiconductors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Gordon Davies |
Publisher | : |
Total Pages | : 540 |
Release | : 1992 |
Genre | : Semiconductors |
ISBN | : |
Author | : Ping Jiang |
Publisher | : World Scientific |
Total Pages | : 2151 |
Release | : 1993-03-31 |
Genre | : |
ISBN | : 9814554065 |
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Author | : Gordon Davies |
Publisher | : |
Total Pages | : 572 |
Release | : 1992 |
Genre | : Semiconductors |
ISBN | : |
Author | : Gordon Davies |
Publisher | : Trans Tech Publications |
Total Pages | : 584 |
Release | : 1992 |
Genre | : Science |
ISBN | : |
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
Author | : |
Publisher | : Academic Press |
Total Pages | : 541 |
Release | : 1999-05-05 |
Genre | : Science |
ISBN | : 0080525253 |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference
Author | : W. Murray Bullis |
Publisher | : |
Total Pages | : 716 |
Release | : 1991 |
Genre | : Semiconductors |
ISBN | : |
Author | : Helmut Heinrich |
Publisher | : |
Total Pages | : 724 |
Release | : 1994 |
Genre | : Semiconductors |
ISBN | : |
Author | : H. Scheer |
Publisher | : Routledge |
Total Pages | : 3235 |
Release | : 2020-11-25 |
Genre | : Technology & Engineering |
ISBN | : 1134275544 |
The European Photovoltaic Solar Energy Conferences are dedicated to accelerating the impetus towards sustainable development of global PV markets. The 16th in the series, held in Glasgow UK, brought together more than 1500 delegates from 72 countries, and provided an important and vital forum for information exchange in the field. The Conference Proceedings place on record a new phase of market development and scientific endeavour in the PV industry, representing current and innovative thinking in all aspects of the science, technology, markets and business of photovoltaics. In three volumes, the Proceedings present some 790 papers selected for presentation by the scientific review committee of the 16th European Photovoltaic Solar Energy Conference. The comprehensive range of topics covered comprise: * Fundamentals, Novel Devices and New Materials * Thin Film Cells and Technologies * Space Cells and Systems * Crystalline Silicon Solar Cells and Technologies * PV Integration in Buildings * PV Modules and Components of PV Systems * Implementation, Strategies, National Programs and Financing Schemes * Market Deployment in Developing Countries These proceedings are an essential reference for all involved in the global PV industry- scientists, researchers, technologists and those with an interest in global market trends. The conference was organised by WIP-Renewable Energies, Munich, Germany.
Author | : David J Lockwood |
Publisher | : World Scientific |
Total Pages | : 2858 |
Release | : 1995-01-20 |
Genre | : |
ISBN | : 9814550159 |
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.