Porous Silicon Material Technology And Devices
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Author | : H. Münder |
Publisher | : Newnes |
Total Pages | : 344 |
Release | : 1996-07-08 |
Genre | : Science |
ISBN | : 0444596348 |
These proceedings represent the most recent progress in the field of porous silicon. Several papers present results in which the influence of the formation parameters on the structural and optical properties has been investigated. Further topics dealt with include: the influence of light during the formation process on the photoluminescence behaviour; fundamental mechanism of the photoluminescence; the electroluminescence of porous silicon; applications based on porous silicon; charge carrier transport.
Author | : R. Herino |
Publisher | : |
Total Pages | : 0 |
Release | : |
Genre | : |
ISBN | : |
Author | : Walter Lang |
Publisher | : North Holland |
Total Pages | : 329 |
Release | : 1996 |
Genre | : Technology & Engineering |
ISBN | : 9780444824141 |
These proceedings represent the most recent progress in the field of porous silicon. Several papers present results in which the influence of the formation parameters on the structural and optical properties has been investigated. Further topics dealt with include: the influence of light during the formation process on the photoluminescence behaviour; fundamental mechanism of the photoluminescence; the electroluminescence of porous silicon; applications based on porous silicon; charge carrier transport.
Author | : Ghenadii Korotcenkov |
Publisher | : CRC Press |
Total Pages | : 620 |
Release | : 2016-01-06 |
Genre | : Science |
ISBN | : 1498782558 |
Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a
Author | : Hari Singh Nalwa |
Publisher | : Academic Press |
Total Pages | : 646 |
Release | : 2001-06-13 |
Genre | : Technology & Engineering |
ISBN | : 0080541232 |
This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format
Author | : Zhe Chuan Feng |
Publisher | : World Scientific |
Total Pages | : 496 |
Release | : 1994 |
Genre | : Science |
ISBN | : 9789810216344 |
Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 eV, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, µc-Si), device applications, future developments.
Author | : Vitalyi Igorevich Talanin |
Publisher | : BoD – Books on Demand |
Total Pages | : 306 |
Release | : 2017-05-31 |
Genre | : Science |
ISBN | : 9535131591 |
The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.
Author | : Ghenadii Korotcenkov |
Publisher | : CRC Press |
Total Pages | : 429 |
Release | : 2016-04-21 |
Genre | : Science |
ISBN | : 1482264552 |
Porous silicon is rapidly attracting increasing interest in various fields, including optoelectronics, microelectronics, photonics, medicine, chemistry, biosensing, and energy. Porous Silicon: Formation and Properties fills a gap in the literature of the field today, providing a thorough introduction to current knowledge of the formation, processin
Author | : J.-P. Colinge |
Publisher | : Springer Science & Business Media |
Total Pages | : 294 |
Release | : 1997-09-30 |
Genre | : Technology & Engineering |
ISBN | : 9780792380078 |
Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.
Author | : Paul Siffert |
Publisher | : Springer Science & Business Media |
Total Pages | : 580 |
Release | : 2004-07-26 |
Genre | : Science |
ISBN | : 9783540405467 |
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, it reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments. A team of expert authors, many of them pioneers in the field, have written informative and stimulating contributions that will be of interest to all scientists working with silicon.