Plasma-enhanced Chemical Vapor Deposition and Characterization of Tungsten Films
Author | : John Ka-ngai Chu |
Publisher | : |
Total Pages | : 270 |
Release | : 1982 |
Genre | : Dissertations, Academic |
ISBN | : |
Download Plasma Enhanced Chemical Vapor Deposition And Characterization Of Tungsten Films full books in PDF, epub, and Kindle. Read online free Plasma Enhanced Chemical Vapor Deposition And Characterization Of Tungsten Films ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : John Ka-ngai Chu |
Publisher | : |
Total Pages | : 270 |
Release | : 1982 |
Genre | : Dissertations, Academic |
ISBN | : |
Author | : Kathryn M. Tracy |
Publisher | : |
Total Pages | : 246 |
Release | : 1996 |
Genre | : Chemical vapor deposition |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 8 |
Release | : 1993 |
Genre | : |
ISBN | : |
A low pressure chemical vapor deposition (LPCVD) process for depositing W{sub X}B{sub (1-X)} films from WF6 and B2H6 is described. The depositions were performed in a cold wall reactor on 6 in. Si wafers at 400C. During deposition, pressure was maintained at a fixed level in the range of 200 to 260 mTorr. Ratio of WF6/B2H6 was varied from 0.05 to 1.07. Carrier gas was either 100 sccm of Ar with a gas flow of 308 to 591 sccm, or 2000 sccm of Ar and 2000 sccm of H2 with the overall gas flow from 4213 to 4452 sccm. Two stable deposition regions were found separated by an unstable region that produced non-uniform films. The B-rich films produced in one of the stable deposition regions had W concentrations of 30 at.% and resistivities between 200 and 300 [mu]ohm·cm. The W-rich films produced in the other stable deposition region had W concentrations of 80 at.% and resistivities of 100 [mu]ohm·cm. As-deposited films had densities similar to bulk material of similar stoichiometry. Barrier properties of the films against diffusion of Cu to 700C in vacuum were measured by 4-point probe. Also, annealing was carried out to 900C in order to determine phases formed as the films crystallize. These studies indicate that W{sub X}B{sub (1-X)} films may be useful barriers in ULSI metallization applications.
Author | : Uday Vinod Patel |
Publisher | : |
Total Pages | : 224 |
Release | : 1994 |
Genre | : Chemical vapor deposition |
ISBN | : |
Author | : David Perese |
Publisher | : |
Total Pages | : 158 |
Release | : 1996 |
Genre | : Plasma-enhanced chemical vapor deposition |
ISBN | : |
Author | : Chris R. Kleijn |
Publisher | : Birkhäuser |
Total Pages | : 138 |
Release | : 2013-11-11 |
Genre | : Science |
ISBN | : 3034877412 |
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.