Eleven microcircuit logic gates, representing five types of construction techniques, and a number of thin-film components were tested for transient responses using pulsed ionizing radiation and for permanent damage using neutrons. A linear accelerator provided the radiation for both tests (10-Mev electrons and uranium photoneutrons respectively). Logic failures due to ionizing radiation pulses required from 6 to 1,000 rads (Si) or from 10 to the 8 power to 10 to the 10 power rads (Si)/sec and occurred usually in the 1 state but occasionally at lower radiation levels in the 0 state. Detailed studies were also made on components that were electrically isolated from each circuit. Results indicate that the failure levels are primarily a function of circuit design and that construction methods, although having some effect, are of less significance. Responses of thin-film components were attributed mainly to secondary-emission effects. Neutron irradiation caused all circuits to fail at about 10 to the 15 power n/cm/sq (E> 10 kev). The circuit degradation was due entirely to the degradation of the circuit transistors. Higher leakage currents developed in monolithic circuits had no effect on circuit performance. Failure levels depended on the transistor gain degradation, its initial value, and the minimum gain required for the circuit to function. (Author).