Optical And Electronic Properties Of Ingaas Self Assembled Quantum Dots
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Author | : Malte Huck |
Publisher | : diplom.de |
Total Pages | : 137 |
Release | : 2010-03-25 |
Genre | : Science |
ISBN | : 3836644398 |
Inhaltsangabe:Abstract: Chapter 1: In this thesis we investigate the optical properties of self-assembled quantum dots exposed to a lateral electric field. As a result of the electric field the wave functions of electrons and holes inside the quantum dot are manipulated, which makes it possible to tune their energy levels and control the optical properties of the system. The possibility of tuning the emission energy of different few particle states using this method makes this system very promising for the use of a source of polarization entangled photons as discussed in the following sections. In Section 1.1 the concept of entangled states is introduced together with a brief historical overview. The possibility of using the exciton biexciton cascade of a self-assembled quantum dot for the generation of entangled photon pairs is presented in Section 1.2. Chapter 2: In this chapter we introduce the concept of quantum dots and demonstrate their optical emission properties. In Section 2.1 the quantum dot is introduced as a three-dimensional charge carrier trap. Several types of quantum dots are presented in an overview. In Section 2.2 we discuss the physical effects that occur on the way from bulk semiconductor material to the three-dimensional charge carrier confinement in the case of quantum dots. The growth of self-assembled quantum dot samples is the topic of Section 2.3, where the technique of molecular beam epitaxy is introduced (Section 2.3.1). This technique is used to grow the semiconductor quantum dots via heteroepitaxy in the Stranski-Krastanov growth mode (Section 2.3.2). Quantum dots are commonly referred to as artificial atoms due to their atomlike emission features. The origin for this expression is explained in Section 2.4 on the basis of the energetic structure of self-assembled quantum dots. The optical properties of quantum dots are discussed in Section 2.5, beginning with an introduction to the experimental setup that has been used to investigate the quantum dots during this thesis (Section 2.5.1). Different optical excitation modes are presented in Section 2.5.2 and in Section 2.5.3 we discuss, how to achieve a low enough quantum dot density on the analyzed samples. Section 2.5.4 deals with the photoluminescence of different exciton states and in Section 2.5.5 we present how these lines can be identified via power dependent measurements. Finally, the concept of initial charges in self-assembled quantum dots is presented in [...]
Author | : |
Publisher | : Academic Press |
Total Pages | : 385 |
Release | : 1999-03-29 |
Genre | : Technology & Engineering |
ISBN | : 0080864589 |
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Author | : Norman Baer |
Publisher | : |
Total Pages | : 194 |
Release | : 2006 |
Genre | : |
ISBN | : |
Author | : 張峻瑋 |
Publisher | : |
Total Pages | : 160 |
Release | : 2003 |
Genre | : |
ISBN | : |
Author | : Peter Michler |
Publisher | : Springer Science & Business Media |
Total Pages | : 370 |
Release | : 2003-12-09 |
Genre | : Science |
ISBN | : 9783540140221 |
Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons.
Author | : Zhiming M Wang |
Publisher | : Springer Science & Business Media |
Total Pages | : 470 |
Release | : 2007-11-29 |
Genre | : Technology & Engineering |
ISBN | : 0387741917 |
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.
Author | : Philip Douglas Siverns |
Publisher | : |
Total Pages | : 0 |
Release | : 2001 |
Genre | : |
ISBN | : |
Author | : |
Publisher | : Academic Press |
Total Pages | : 368 |
Release | : 1999-04-05 |
Genre | : Technology & Engineering |
ISBN | : 9780127521695 |
This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field. The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future. The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Author | : Y. Masumoto |
Publisher | : Springer Science & Business Media |
Total Pages | : 500 |
Release | : 2013-04-17 |
Genre | : Technology & Engineering |
ISBN | : 3662050013 |
Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. Recent years have witnessed the discovery of many striking new aspects of the optical response and electronic transport phenomena. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots. It focuses especially on excitons, multi-excitons, their dynamical relaxation behaviour and their interactions with the surroundings of a semiconductor quantum dot. Recent developments in fabrication techniques are reviewed and potential applications discussed. This book will serve not only as an introductory textbook for graduate students but also as a concise guide for active researchers.
Author | : Bruce A. Joyce |
Publisher | : Springer Science & Business Media |
Total Pages | : 401 |
Release | : 2006-03-30 |
Genre | : Technology & Engineering |
ISBN | : 140203315X |
This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 Am and 1.55 Am."