In an effort to learn more about the microscopic variations in interfacial structures which lead to the previously observed systematics in first compound nucleation in metal-semiconductor systems, we have made measurements of 1/f noise in systems composed of thin metal films deposited onto semiconductor substrates as a function of film thickness or surface resistance. Near-noble metal films deposited onto silicon typically display semiconductor-metal transitions at room temperature as a function of film resistance or metal thickness. measurements of 1/f noise on thin metal films deposited onto silicon can thus be correlated with those observed electronic and structural transitions. Measurements of cobalt thin films r.f. sputtered onto silicon substrates at room temperature show a gradual increase in the magnitude of noise over five orders as the metal thickness is increased to near that of the critical value of crystallization at room temperature. This is followed by a sudden drop in magnitude over six orders after the semiconductor-metal transition has taken place and partial crystallization has occurred. The frequency exponent of the noise varies for these experiments from values near unity at high film resistance to a value approaching 2 near the critical thickness and then abruptly back to near unity when metallization has occurred. The results of nickel films show similar results but with significantly more scatter in the data and no clear trend for the frequency exponents.