Novel Nonvolatile Memories With Engineered Nanocrystal Floating Gate
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Author | : Bei Li |
Publisher | : |
Total Pages | : 130 |
Release | : 2010 |
Genre | : Flash memories (Computers) |
ISBN | : 9781124121291 |
In short, engineering the nano-floating gate by replacing Si nanocrystals with hybrid nanocrystals and silicide nanocrystals benefits the device retention time. These new memories also exhibit faster programming and erasing speeds. The enhanced memory performance makes the devices fit for next generation memory with further scaled tunnel oxid.
Author | : Hai Liu |
Publisher | : |
Total Pages | : 198 |
Release | : 2010 |
Genre | : |
ISBN | : |
The increasing demands on higher density, lower cost, higher speed, better endurance and longer retention has push flash memory technology, which is predominant and the driving force of the semiconductor nonvolatile memory market in recent years, to the position facing great challenges. However, the conventional flash memory technology using continuous highly doped polysilicon as floating gate, which is the most common in today's commercial market, can't satisfy these demands, with the transistor size continuously scaling down beyond 32 nm. Nanocrystal floating gate flash memory and SONOS-type flash memory are considered among the most promising approaches to extend scalability and performance improvement for next generation flash memory. This dissertation addresses the issues that have big effects on nanocrystal floating gate flash memory and SONOS-type flash memory performances. New device structures and new material compatible to CMOS flow are proposed and demonstrated as potential solutions for further device performance improvement. First, the effect of nanocrystal-high k dielectric interface quality on nanocrystal flash memory performance is studied. By using germanium-silicon core-shell nanocrystals or ruthenium nanocrystals buried in HfO2 as charge storage nodes, high interface quality has been achieved, leading to promising memory device performance. Next, another crucial challenge for nanocrystal flash memory on how to deposit uniformly distributed nanocrystal matrix in good shape and size control with high density is discussed. Using protein GroEL to obtain well ordered high density nanocrystal pattern, a flash memory device with Ni nanocrystals buried in HfO2 is demonstrated. For this technique, the nanocrystal size is restricted to the GroEL's central cavity size and the density is limited by protein template. To overcome this limitation, a novel method using self-assembled Co-SiO2 nanocrystals as charge storage nodes is demonstrated. Separated by thin SiO2, these nanocrystals can form close packed form to achieve ultrahigh density. Finally, charge trapping layer band engineering is proposed for SONOS-type memory for better memory performance. By manipulating the pulse ratio of Hf and Al precursor during ALD deposition, the band diagram of Hf[subscript x]Al[subscript y]O charge trapping layer is optimized to have a Hf : Al ratio 3:1 at bottom and 1:3 at the top, leading to better trade-off between programming and retention for the of memory device.
Author | : Yan Zhu |
Publisher | : |
Total Pages | : 354 |
Release | : 2007 |
Genre | : Computer storage devices |
ISBN | : |
Author | : Writam Banerjee |
Publisher | : CRC Press |
Total Pages | : 683 |
Release | : 2024-08-09 |
Genre | : Technology & Engineering |
ISBN | : 1040119107 |
In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
Author | : Writam Banerjee |
Publisher | : CRC Press |
Total Pages | : 534 |
Release | : 2018-10-09 |
Genre | : Science |
ISBN | : 1351203258 |
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
Author | : Jingjian Ren |
Publisher | : |
Total Pages | : 90 |
Release | : 2012 |
Genre | : Flash memories (Computers) |
ISBN | : |
Author | : Arup Bhattacharyya |
Publisher | : CRC Press |
Total Pages | : 566 |
Release | : 2017-07-06 |
Genre | : Technology & Engineering |
ISBN | : 1351798316 |
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author | : Barbara de Salvo |
Publisher | : John Wiley & Sons |
Total Pages | : 222 |
Release | : 2013-05-10 |
Genre | : Technology & Engineering |
ISBN | : 1118617800 |
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author | : Kian Chiew Seow |
Publisher | : |
Total Pages | : 100 |
Release | : 2007 |
Genre | : |
ISBN | : |
This thesis explores the commercialization of germanium-based nanocrystal memories. Demand for smaller and faster electronics and embedded systems supports the development of high-density, low-power non-volatile electronic memory devices. Flash memory cells designed for ten years of data retention require the use of a thick tunneling oxide. This compromises writing and reading speed as well as endurance. A smaller device size can be achieved and speed and can be improved by decreasing the oxide thickness. However, significant charge leakage will occur if the oxide is too thin, which will reduce the data retention time dramatically. This imposes a limit to the amount by which the oxide thickness can be decreased in conventional devices. Research has shown that by incorporating nanocrystals in the tunnel oxide, charge traps are created which reduce charge leakage and improve endurance through charge-storage redundancy. By replacing the conventional floating gate memory with one using Si or Ge nanocrystals, the nonvolatile memory exhibits high programming speed with low programming voltage and superior retention time, and yet is compatible with conventional silicon technology. This thesis provides an analysis of competing technologies, an intellectual property analysis, costs modeling as well as ways to improve nanocrystal memories in order to compete with other forms of emerging technologies to replace conventional Flash memories.
Author | : Rino Micheloni |
Publisher | : Springer Science & Business Media |
Total Pages | : 313 |
Release | : 2008-07-24 |
Genre | : Technology & Engineering |
ISBN | : 3540790780 |
For the technological progress in communication technology it is necessary that the advanced studies in circuit and software design are accompanied with recent results of the technological research and physics in order to exceed its limitations. This book is a guide which treats many components used in mobile communications, and in particular focuses on non-volatile memories. It emerges following the conducting line of the non-volatile memory in the wireless system: On the one hand it develops the foundations of the interdisciplinary issues needed for design analysis and testing of the system. On the other hand it deals with many of the problems appearing when the systems are realized in industrial production. These cover the difficulties from the mobile system to the different types of non-volatile memories. The book explores memory cards, multichip technologies, and algorithms of the software management as well as error handling. It also presents techniques of assurance for the single components and a guide through the Datasheet lectures.