Electron Transport in Compound Semiconductors

Electron Transport in Compound Semiconductors
Author: B.R. Nag
Publisher: Springer Science & Business Media
Total Pages: 476
Release: 2012-12-06
Genre: Science
ISBN: 3642814166

Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.

Electron Transport Phenomena in Semiconductors

Electron Transport Phenomena in Semiconductors
Author: B. M. Askerov
Publisher: World Scientific
Total Pages: 416
Release: 1994
Genre: Technology & Engineering
ISBN: 9789810212834

This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.

Theory of Electron Transport in Semiconductors

Theory of Electron Transport in Semiconductors
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
Total Pages: 590
Release: 2010-09-05
Genre: Science
ISBN: 3642105866

This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Advanced Physics of Electron Transport in Semiconductors and Nanostructures
Author: Massimo V. Fischetti
Publisher: Springer
Total Pages: 481
Release: 2016-05-20
Genre: Technology & Engineering
ISBN: 3319011014

This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Physics of Hot Electron Transport in Semiconductors

Physics of Hot Electron Transport in Semiconductors
Author: Chin Sen Ting
Publisher: World Scientific
Total Pages: 336
Release: 1992
Genre: Science
ISBN: 9789810210083

This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Balance Equation Approach to Electron Transport In Semiconductors

Balance Equation Approach to Electron Transport In Semiconductors
Author: Xiaolin Lei
Publisher: World Scientific
Total Pages: 657
Release: 2008
Genre: Technology & Engineering
ISBN: 9812819029

This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.

Spectroscopy of Nonequilibrium Electrons and Phonons

Spectroscopy of Nonequilibrium Electrons and Phonons
Author: C.V. Shank
Publisher: Elsevier
Total Pages: 513
Release: 2012-12-02
Genre: Science
ISBN: 0444600574

The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.

Electron and hole transport in compound semiconductors

Electron and hole transport in compound semiconductors
Author:
Publisher:
Total Pages: 3
Release: 1994
Genre:
ISBN:

We investigated transport properties of InSb and GaSb. We implemented an algorithm for electron-electron scattering in the Monte Carlo simulator, and used this simulator to study the effect of electron-electron scattering at relatively low electric fields. We also developed a program for the calculation of the electron velocity and electron temperature as functions of an electric field. This calculation was based on the moment and energy balance equations. We applied this program to study the heating and drift velocity of electrons in InSb. This method is less time consuming than the Monte Carlo method and more suitable for the implementation in device simulators. We have also calculated numerically the low field mobility due to acoustic and optical phonons, obtaining excellent agreement with our Monte Carlo simulations. Based on these studies, we wrote a program for the calculation of mobilities in all cubic semiconductors and their alloys. The program assumes spherical bands, but accounts for carrier degeneracy, non-parabolicity, and varying screening length. (It can be easily modified to account for non-parabolicity.).

Nonequilibrium Effects in Ion and Electron Transport

Nonequilibrium Effects in Ion and Electron Transport
Author: Jean W. Gallagher
Publisher: Springer
Total Pages: 464
Release: 2011-09-16
Genre: Technology & Engineering
ISBN: 9781461279150

This volume presents the contributions of the participants in the Sixth International Swarm Seminar, held August 2-5, 1989, at the Webb Institute in Glen Cove, New York. The Swarm Seminars are traditionally held as relatively small satellite conferences of the International Conference on the Physics of Electronic and Atomic Collisions (ICPEAC) which occurs every two years. The 1989 ICPEAC took place in New York City prior to the Swarm Seminar. The focus of the Swarm Seminars has been on basic research relevant to understanding the transport of charged particles, mainly electrons and ions, in weakly ionized gases. This is a field that tends to bridge the gap between studies of fundamental binary atomic and molecular collision processes and studies of electrical breakdown or discharge phenomena in gases. Topics included in the 1989 seminar ranged the gamut from direct determinations of charged-particle collision cross sections to use of cross sections and swarm parameters to model the behavior of electrical gas discharges. Although the range of subjects covered was in many respects similar to that of previous seminars, there was an emphasis on certain selected themes that tended to give this seminar a distinctly different flavor. There was, for example, considerable discussion on the meaning of "equilibrium" and the conditions under which nonequilibrium effects become important in the transport of electrons through a gas.