Non Volatile Memory Devices Beyond Process Scaled Planar Flash Technology
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| Author | : Shyam Sunder Raghunathan |
| Publisher | : Stanford University |
| Total Pages | : 173 |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
NAND flash memories are ubiquitous in their use as portable storage media in cellphones, cameras, music players, and other portable electronic devices. The NAND flash memory device, consisting of a floating-gate transistor cell, is the most aggressively scaled electronic device, as evidenced by ever-increasing memory capacities. In this work, we will examine possible problems arising from continued scaling of these structures, and discuss novel solutions to overcome them. Firstly, we investigate scaling of the conventional poly-silicon floating-gate, aimed at reducing cell-to-cell interference. We experimentally delineate a new reliability concern for the first time, with programming current through ultra-thin poly-silicon floating-gates becoming increasingly ballistic. We also experimentally demonstrate doping-related issues in the poly-silicon floating-gate. We then apply a novel metal-based floating-gate cell for the first time, designed to overcome the problems discussed above. We explore factors that influence the choice of metal, and demonstrate excellent functionality in ultra-thin metal floating-gate cells scaled down to 3 nm TiN floating-gate thickness, thus greatly reducing cell-to-cell interference. Finally, in order to facilitate continued scaling of the control dielectric, we explore replacement of the conventional silicon oxide-nitride dielectric with high-k dielectric materials. We integrate poly-silicon and metal floating-gate cells with Al2O3 high-k control dielectric. Further, we establish that a deeper work-function control gate is helpful in reducing gate-injection. Combining ultra-thin metal floating-gate, high-k control dielectric and deep work-function control gate, we enable the planar floating-gate cell as a scalable candidate.
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : Seiichi Aritome |
| Publisher | : John Wiley & Sons |
| Total Pages | : 433 |
| Release | : 2015-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1119132622 |
Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 416 |
| Release | : 2005-03-11 |
| Genre | : Computers |
| ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
| Author | : Panagiotis Dimitrakis |
| Publisher | : Springer |
| Total Pages | : 219 |
| Release | : 2015-08-05 |
| Genre | : Technology & Engineering |
| ISBN | : 3319152904 |
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
| Author | : Rino Micheloni |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 391 |
| Release | : 2012-10-15 |
| Genre | : Science |
| ISBN | : 940075146X |
Solid State Drives (SSDs) are gaining momentum in enterprise and client applications, replacing Hard Disk Drives (HDDs) by offering higher performance and lower power. In the enterprise, developers of data center server and storage systems have seen CPU performance growing exponentially for the past two decades, while HDD performance has improved linearly for the same period. Additionally, multi-core CPU designs and virtualization have increased randomness of storage I/Os. These trends have shifted performance bottlenecks to enterprise storage systems. Business critical applications such as online transaction processing, financial data processing and database mining are increasingly limited by storage performance. In client applications, small mobile platforms are leaving little room for batteries while demanding long life out of them. Therefore, reducing both idle and active power consumption has become critical. Additionally, client storage systems are in need of significant performance improvement as well as supporting small robust form factors. Ultimately, client systems are optimizing for best performance/power ratio as well as performance/cost ratio. SSDs promise to address both enterprise and client storage requirements by drastically improving performance while at the same time reducing power. Inside Solid State Drives walks the reader through all the main topics related to SSDs: from NAND Flash to memory controller (hardware and software), from I/O interfaces (PCIe/SAS/SATA) to reliability, from error correction codes (BCH and LDPC) to encryption, from Flash signal processing to hybrid storage. We hope you enjoy this tour inside Solid State Drives.
| Author | : Roberto Gastaldi |
| Publisher | : Springer |
| Total Pages | : 261 |
| Release | : 2017-03-07 |
| Genre | : Technology & Engineering |
| ISBN | : 3319477242 |
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.
| Author | : |
| Publisher | : |
| Total Pages | : 994 |
| Release | : 2008 |
| Genre | : Dissertations, Academic |
| ISBN | : |
| Author | : Rino Micheloni |
| Publisher | : Springer |
| Total Pages | : 391 |
| Release | : 2016-05-26 |
| Genre | : Computers |
| ISBN | : 9401775125 |
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
| Author | : Arup Bhattacharyya |
| Publisher | : CRC Press |
| Total Pages | : 512 |
| Release | : 2017-07-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1351798324 |
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
