Non Equilibrium Intrinsic Point Defects Phenomena In Silicon And Iii V Compounds
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Author | : S. Mahajan |
Publisher | : Elsevier |
Total Pages | : 607 |
Release | : 2013-10-22 |
Genre | : Technology & Engineering |
ISBN | : 1483286576 |
The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Author | : Kompa, Günter |
Publisher | : kassel university press GmbH |
Total Pages | : 762 |
Release | : 2014 |
Genre | : Compound semiconductors |
ISBN | : 3862195414 |
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author | : |
Publisher | : |
Total Pages | : 728 |
Release | : 1988 |
Genre | : Dissertation abstracts |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 840 |
Release | : 1990 |
Genre | : Materials |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1252 |
Release | : 1989 |
Genre | : Dissertations, Academic |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1170 |
Release | : 1990 |
Genre | : Engineering |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 950 |
Release | : 1992 |
Genre | : Crystals |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 636 |
Release | : 1992 |
Genre | : Crystals |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 788 |
Release | : 1993 |
Genre | : Dissertations, Academic |
ISBN | : |
Author | : Wolfgang Schröter |
Publisher | : |
Total Pages | : 632 |
Release | : 1991 |
Genre | : Ceramic materials |
ISBN | : |